Infineon Technologies BSS139 E6327

Name: BSS139 E6327
Brand: Infineon Technologies
SKU: 2492977-BSS139 E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS139 E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2492977-BSS139 E6327

Description:: MOSFET N-CH 250V 100MA SOT-23

ECAD Model:

Datasheet:: BSS139 E6327

Specifications

Infineon Technologies BSS139 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS139 E6327.

Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
360mW Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
14 Ω @ 0.1mA, 10V
Vgs(th) (Max) @ Id
1V @ 56μA
Input Capacitance (Ciss) (Max) @ Vds
76pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100mA Ta
Gate Charge (Qg) (Max) @ Vgs
3.5nC @ 5V
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
0V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.1A
Drain-source On Resistance-Max
30Ohm
DS Breakdown Voltage-Min
250V
FET Feature
Depletion Mode
Feedback Cap-Max (Crss)
3.3 pF
RoHS Status
RoHS Compliant

Description

BSS139 E6327 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 76pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 0.1A.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (0V 10V), this device contributes to a reduction in overall power consumption.

BSS139 E6327 Features
a 250V drain to source voltage (Vdss)

BSS139 E6327 Applications
There are a lot of Infineon Technologies
BSS139 E6327 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

BSS139 E6327 More Descriptions

Low Voltage Depletion MOSFET, 250V, SOT-23,
MOSFET N-CH 250V 100MA SOT23-3
Compliant Surface Mount Lead Free Tape & Reel (TR) 14 Ω TO-236-3 30 mA 3
Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 3 PIN
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to BSS139 E6327.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Feature

Feedback Cap-Max (Crss)

RoHS Status

JESD-609 Code

Terminal Finish

Additional Feature

Operating Mode

Transistor Application

View Compare
BSS139 E6327

Infineon Technologies

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2006

Obsolete

1 (Unlimited)

3

EAR99

8541.21.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

N-Channel

14 Ω @ 0.1mA, 10V

1V @ 56μA

76pF @ 25V

100mA Ta

3.5nC @ 5V

250V

0V 10V

±20V

0.1A

30Ohm

250V

Depletion Mode

3.3 pF

RoHS Compliant

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

Discontinued

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

BSS139 E6327 vs BSS138N E8004
BSS123 E6433

Infineon Technologies

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

Obsolete

1 (Unlimited)

3

EAR99

8541.21.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

100V

4.5V 10V

±20V

0.17A

10Ohm

100V

-

6 pF

Non-RoHS Compliant

e0

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

ENHANCEMENT MODE

SWITCHING

BSS139 E6327 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

Surface Mount

SC-70, SOT-323

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

Obsolete

1 (Unlimited)

3

EAR99

8541.21.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

compliant

40

3

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

60V

4.5V 10V

±20V

0.28A

-

60V

-

4.2 pF

RoHS Compliant

e3

MATTE TIN

LOGIC LEVEL COMPATIBLE

ENHANCEMENT MODE

-

BSS139 E6327 vs BSS138W L6433