Diodes Incorporated BSS138W-7-F

Name: BSS138W-7-F
Brand: Diodes Incorporated
SKU: 2848392-BSS138W-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138W-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2848392-BSS138W-7-F

Description:: MOSFET N-CH 50V 200MA SC70-3

ECAD Model:

Datasheet:: BSS138W-7-F

Specifications

Diodes Incorporated BSS138W-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138W-7-F.

Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
3.5Ohm
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Powers
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Voltage
50V
Power Dissipation-Max
200mW Ta
Element Configuration
Single
Current
2A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Dual Supply Voltage
50V
Nominal Vgs
1.2 V
Feedback Cap-Max (Crss)
8 pF
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS138W-7-F Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.2V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

BSS138W-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V

BSS138W-7-F Applications
There are a lot of Diodes Incorporated
BSS138W-7-F applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

BSS138W-7-F More Descriptions

Transistor: N-MOSFET, unipolar, 50V, 0.2A, 3.5ohm, 0.2W, -55 150 deg.C, SMD, SOT323(SC70)
Transistor MOSFET N Channel 50 Volt 0.2 Amp 3 Pin SOT-323 Tape And Reel
Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-323
Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-323 T/R / MOSFET N-CH 50V 200MA SC70-3
MOSFET, N CH, 50V, 0.2A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-323 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET, N CH, 50V, 0.2A, SOT-323; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 200mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 50V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to BSS138W-7-F.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Series

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Finish

HTS Code

JESD-30 Code

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Reach Compliance Code

View Compare
BSS138W-7-F

Diodes Incorporated

16 Weeks

Tin

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

3.5Ohm

LOW THRESHOLD

FET General Purpose Powers

50V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

200mA

40

3

Not Qualified

1

1

50V

200mW Ta

Single

2A

ENHANCEMENT MODE

200mW

20 ns

N-Channel

SWITCHING

3.5 Ω @ 220mA, 10V

1.5V @ 250μA

50pF @ 10V

200mA Ta

10V

±20V

20 ns

200mA

1.2V

20V

75V

50V

1.2 V

8 pF

1mm

2.2mm

1.35mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SIPMOS®

1.4nC @ 10V

60V

-

-

-

-

-

-

-

-

-

BSS138W-7-F vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

-

Obsolete

1 (Unlimited)

3

-

EAR99

-

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

Not Qualified

1

-

-

360mW Ta

-

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

4.5V 10V

±20V

-

-

-

-

-

-

-

6 pF

-

-

-

-

Non-RoHS Compliant

-

SIPMOS®

2.67nC @ 10V

100V

YES

Tin/Lead (Sn/Pb)

8541.21.00.95

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

0.17A

10Ohm

100V

-

BSS138W-7-F vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

-

-

Surface Mount

SC-70, SOT-323

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

-

Obsolete

1 (Unlimited)

3

-

EAR99

-

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

3

Not Qualified

1

-

-

500mW Ta

-

-

ENHANCEMENT MODE

-

-

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

4.5V 10V

±20V

-

-

-

-

-

-

-

4.2 pF

-

-

-

-

RoHS Compliant

-

SIPMOS®

1.5nC @ 10V

60V

YES

MATTE TIN

8541.21.00.95

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

0.28A

-

60V

compliant

BSS138W-7-F vs BSS138W L6433