BSS138Q-7-F

Diodes Incorporated BSS138Q-7-F

Part Number:
BSS138Q-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
3554449-BSS138Q-7-F
Description:
MOSFET N-CH 50V 0.2A SOT23
ECAD Model:
Datasheet:
BSS138Q-7-F

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Specifications
Diodes Incorporated BSS138Q-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138Q-7-F.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    300mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 220mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    200mA Ta
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    200mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.2A
  • Drain to Source Breakdown Voltage
    75V
  • Max Junction Temperature (Tj)
    150°C
  • Feedback Cap-Max (Crss)
    8 pF
  • Height
    1.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
BSS138Q-7-F Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BSS138Q-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 20 ns
a 50V drain to source voltage (Vdss)


BSS138Q-7-F Applications
There are a lot of Diodes Incorporated
BSS138Q-7-F applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSS138Q-7-F More Descriptions
Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23
Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to BSS138Q-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Feedback Cap-Max (Crss)
    Height
    REACH SVHC
    RoHS Status
    Series
    Gate Charge (Qg) (Max) @ Vgs
    Surface Mount
    Terminal Finish
    HTS Code
    JESD-30 Code
    Qualification Status
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Reach Compliance Code
    Pin Count
    View Compare
  • BSS138Q-7-F
    BSS138Q-7-F
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    1
    SINGLE WITH BUILT-IN DIODE
    1
    300mW Ta
    ENHANCEMENT MODE
    300mW
    20 ns
    N-Channel
    SWITCHING
    3.5 Ω @ 220mA, 10V
    1.5V @ 250μA
    50pF @ 10V
    200mA Ta
    10ns
    50V
    10V
    ±20V
    25 ns
    20 ns
    200mA
    20V
    0.2A
    75V
    150°C
    8 pF
    1.1mm
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS138N E8004
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    N-Channel
    -
    3.5 Ω @ 230mA, 10V
    1.4V @ 250μA
    41pF @ 25V
    230mA Ta
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    SIPMOS®
    1.4nC @ 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS123 E6433
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    -
    360mW Ta
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6 Ω @ 170mA, 10V
    1.8V @ 50μA
    69pF @ 25V
    170mA Ta
    -
    100V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.17A
    -
    -
    6 pF
    -
    -
    Non-RoHS Compliant
    SIPMOS®
    2.67nC @ 10V
    YES
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    R-PDSO-G3
    Not Qualified
    10Ohm
    100V
    -
    -
  • BSS138W L6433
    -
    -
    -
    Surface Mount
    SC-70, SOT-323
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    1
    SINGLE WITH BUILT-IN DIODE
    -
    500mW Ta
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    3.5 Ω @ 220mA, 10V
    1.4V @ 26μA
    43pF @ 25V
    280mA Ta
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.28A
    -
    -
    4.2 pF
    -
    -
    RoHS Compliant
    SIPMOS®
    1.5nC @ 10V
    YES
    MATTE TIN
    8541.21.00.95
    R-PDSO-G3
    Not Qualified
    -
    60V
    compliant
    3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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