Diodes Incorporated BSS138Q-7-F
- Part Number:
- BSS138Q-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554449-BSS138Q-7-F
- Description:
- MOSFET N-CH 50V 0.2A SOT23
- Datasheet:
- BSS138Q-7-F
Diodes Incorporated BSS138Q-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138Q-7-F.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5 Ω @ 220mA, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
- Rise Time10ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)200mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.2A
- Drain to Source Breakdown Voltage75V
- Max Junction Temperature (Tj)150°C
- Feedback Cap-Max (Crss)8 pF
- Height1.1mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
BSS138Q-7-F Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BSS138Q-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 20 ns
a 50V drain to source voltage (Vdss)
BSS138Q-7-F Applications
There are a lot of Diodes Incorporated
BSS138Q-7-F applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BSS138Q-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 20 ns
a 50V drain to source voltage (Vdss)
BSS138Q-7-F Applications
There are a lot of Diodes Incorporated
BSS138Q-7-F applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSS138Q-7-F More Descriptions
Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23
Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to BSS138Q-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Feedback Cap-Max (Crss)HeightREACH SVHCRoHS StatusSeriesGate Charge (Qg) (Max) @ VgsSurface MountTerminal FinishHTS CodeJESD-30 CodeQualification StatusDrain-source On Resistance-MaxDS Breakdown Voltage-MinReach Compliance CodePin CountView Compare
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BSS138Q-7-F14 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260401SINGLE WITH BUILT-IN DIODE1300mW TaENHANCEMENT MODE300mW20 nsN-ChannelSWITCHING3.5 Ω @ 220mA, 10V1.5V @ 250μA50pF @ 10V200mA Ta10ns50V10V±20V25 ns20 ns200mA20V0.2A75V150°C8 pF1.1mmNo SVHCROHS3 Compliant------------
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---Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2012--Discontinued1 (Unlimited)----MOSFET (Metal Oxide)-------360mW Ta---N-Channel-3.5 Ω @ 230mA, 10V1.4V @ 250μA41pF @ 25V230mA Ta-60V4.5V 10V±20V----------ROHS3 CompliantSIPMOS®1.4nC @ 10V---------
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---Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING--1SINGLE WITH BUILT-IN DIODE-360mW TaENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta-100V4.5V 10V±20V----0.17A--6 pF--Non-RoHS CompliantSIPMOS®2.67nC @ 10VYESTin/Lead (Sn/Pb)8541.21.00.95R-PDSO-G3Not Qualified10Ohm100V--
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---Surface MountSC-70, SOT-323-SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Obsolete1 (Unlimited)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260401SINGLE WITH BUILT-IN DIODE-500mW TaENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta-60V4.5V 10V±20V----0.28A--4.2 pF--RoHS CompliantSIPMOS®1.5nC @ 10VYESMATTE TIN8541.21.00.95R-PDSO-G3Not Qualified-60Vcompliant3
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