Infineon Technologies BSS138NL6327HTSA1

Name: BSS138NL6327HTSA1
Brand: Infineon Technologies
SKU: 2492284-BSS138NL6327HTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138NL6327HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2492284-BSS138NL6327HTSA1

Description:: MOSFET N-CH 60V 230MA SOT-23

ECAD Model:

Datasheet:: BSS138N Datasheet

Specifications

Infineon Technologies BSS138NL6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS138NL6327HTSA1.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
360mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 230mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
41pF @ 25V
Current - Continuous Drain (Id) @ 25°C
230mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
230mA
Gate to Source Voltage (Vgs)
20V
DS Breakdown Voltage-Min
60V
RoHS Status
RoHS Compliant

Description

BSS138NL6327HTSA1 Overview
The maximum input capacitance of this device is 41pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSS138NL6327HTSA1 Features
a continuous drain current (ID) of 230mA
a 60V drain to source voltage (Vdss)

BSS138NL6327HTSA1 Applications
There are a lot of Infineon Technologies
BSS138NL6327HTSA1 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

BSS138NL6327HTSA1 More Descriptions

Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Compliant Surface Mount Tape and Reel 3.5 Ω TO-236-3 3 41 pF 360 mW
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistors

Product Comparison

The three parts on the right have similar specifications to BSS138NL6327HTSA1.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Technology

Terminal Position

Terminal Form

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

DS Breakdown Voltage-Min

RoHS Status

Surface Mount

JESD-609 Code

Terminal Finish

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

View Compare
BSS138NL6327HTSA1

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2011

Obsolete

1 (Unlimited)

3

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

360mW

N-Channel

SWITCHING

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

230mA

20V

60V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

360mW Ta

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

BSS138NL6327HTSA1 vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

Obsolete

1 (Unlimited)

3

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

100V

4.5V 10V

±20V

-

-

100V

Non-RoHS Compliant

YES

e0

Tin/Lead (Sn/Pb)

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

0.17A

10Ohm

6 pF

BSS138NL6327HTSA1 vs BSS123 E6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

360mW Ta

-

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

100V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS138NL6327HTSA1 vs BSS119 E7978