Infineon Technologies BSS138N-E6327

Name: BSS138N-E6327
Brand: Infineon Technologies
SKU: 2492088-BSS138N-E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138N-E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2492088-BSS138N-E6327

Description:: MOSFET N-CH 60V 230MA SOT-23

ECAD Model:

Datasheet:: BSS138N Datasheet

Specifications

Infineon Technologies BSS138N-E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS138N-E6327.

Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2007
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
HTS Code
8541.21.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
360mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5 Ω @ 230mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
41pF @ 25V
Current - Continuous Drain (Id) @ 25°C
230mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.23A
DS Breakdown Voltage-Min
60V
Feedback Cap-Max (Crss)
3.8 pF
RoHS Status
RoHS Compliant

Description

BSS138N-E6327 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 41pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 0.23A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

BSS138N-E6327 Features
a 60V drain to source voltage (Vdss)

BSS138N-E6327 Applications
There are a lot of Infineon Technologies
BSS138N-E6327 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BSS138N-E6327 More Descriptions

Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23
Single N-Channel 20 V 320 mOhm 1.4 nC 715 mW Silicon SMT Mosfet - SOT-883
MOSFET N-CH 60V 230MA SOT-23 RoHS
Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistors

Product Comparison

The three parts on the right have similar specifications to BSS138N-E6327.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

RoHS Status

View Compare
BSS138N-E6327

Infineon Technologies

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

compliant

40

3

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

0.23A

60V

3.8 pF

RoHS Compliant

-
BSS138N E8004

Infineon Technologies

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

-

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

-

-

-

ROHS3 Compliant

BSS138N-E6327 vs BSS138N E8004
BSS138W L6433

Infineon Technologies

Surface Mount

SC-70, SOT-323

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

compliant

40

3

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

ENHANCEMENT MODE

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

60V

4.5V 10V

±20V

0.28A

60V

4.2 pF

RoHS Compliant

BSS138N-E6327 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

100V

4.5V 10V

±20V

-

-

-

-

BSS138N-E6327 vs BSS119 E7978