Nexperia USA Inc. BSS138AKAR

Name: BSS138AKAR
Brand: Nexperia USA Inc.
SKU: 2478899-BSS138AKAR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138AKAR

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478899-BSS138AKAR

Description:: MOSFET N-CH 60V 0.2A TO-236AB

ECAD Model:

Datasheet:: BSS138AKAR

Specifications

Nexperia USA Inc. BSS138AKAR technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS138AKAR.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300mW Ta 1.06W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds
47pF @ 30V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.51nC @ 4.5V
Rise Time
6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
200mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
0.2A
Drain-source On Resistance-Max
5.2Ohm
Drain to Source Breakdown Voltage
60V
RoHS Status
ROHS3 Compliant

Description

BSS138AKAR Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 47pF @ 30V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (10V).

BSS138AKAR Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 36 ns

BSS138AKAR Applications
There are a lot of Nexperia USA Inc.
BSS138AKAR applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BSS138AKAR More Descriptions

In a Pack of 100, N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR
Power Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin TO-236AB T/R
BSS138AKA - 60 V, single N-channel Trench MOSFET
MOSFET, N CH, 60V, 0.2A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Pow

Product Comparison

The three parts on the right have similar specifications to BSS138AKAR.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

RoHS Status

Series

Drain to Source Voltage (Vdss)

JESD-609 Code

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Configuration

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

View Compare
BSS138AKAR

Nexperia USA Inc.

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

Active

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

1

300mW Ta 1.06W Tc

Single

ENHANCEMENT MODE

5 ns

N-Channel

SWITCHING

4.5 Ω @ 100mA, 10V

1.5V @ 250mA

47pF @ 30V

200mA Ta

0.51nC @ 4.5V

6ns

10V

±20V

22 ns

36 ns

200mA

20V

60V

0.2A

5.2Ohm

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

Discontinued

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

-

-

360mW Ta

-

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

ROHS3 Compliant

SIPMOS®

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS138AKAR vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

-

360mW Ta

-

ENHANCEMENT MODE

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

0.17A

10Ohm

-

Non-RoHS Compliant

SIPMOS®

100V

e0

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

100V

6 pF

-

-

-

BSS138AKAR vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

-

Surface Mount

SC-70, SOT-323

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

-

500mW Ta

-

ENHANCEMENT MODE

-

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

0.28A

-

-

RoHS Compliant

SIPMOS®

60V

e3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

60V

4.2 pF

260

compliant

40

BSS138AKAR vs BSS138W L6433