Diodes Incorporated BSS138-7

Name: BSS138-7
Brand: Diodes Incorporated
SKU: 3554608-BSS138-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3554608-BSS138-7

Description:: MOSFET N-CH 50V 200MA SOT23-3

ECAD Model:

Datasheet:: BSS138

Specifications

Diodes Incorporated BSS138-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138-7.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY, LOW THRESHOLD
Subcategory
FET General Purpose Powers
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.2A
Feedback Cap-Max (Crss)
8 pF
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BSS138-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

BSS138-7 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 20 ns

BSS138-7 Applications
There are a lot of Diodes Incorporated
BSS138-7 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

BSS138-7 More Descriptions

Trans MOSFET N Channel 50 Volt 0.2A 3-Pin SOT-23 Tape and Reel
MOSFET N-CH 50V 200MA SOT23-3
Transistor - FET N-Channel 60V 360mW

Product Comparison

The three parts on the right have similar specifications to BSS138-7.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Series

HTS Code

JESD-30 Code

Configuration

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Reach Compliance Code

View Compare
BSS138-7

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2002

e3

yes

Discontinued

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY, LOW THRESHOLD

FET General Purpose Powers

50V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

200mA

40

3

Not Qualified

1

1

300mW Ta

Single

ENHANCEMENT MODE

300mW

20 ns

N-Channel

SWITCHING

3.5 Ω @ 220mA, 10V

1.5V @ 250μA

50pF @ 10V

200mA Ta

10V

±20V

20 ns

200mA

20V

0.2A

8 pF

1mm

2.9mm

1.3mm

No SVHC

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

Not Qualified

1

-

360mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

4.5V 10V

±20V

-

-

-

0.17A

6 pF

-

-

-

-

Non-RoHS Compliant

-

YES

SIPMOS®

8541.21.00.95

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

2.67nC @ 10V

100V

10Ohm

100V

-

BSS138-7 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

Surface Mount

SC-70, SOT-323

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

-

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

3

Not Qualified

1

-

500mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

4.5V 10V

±20V

-

-

-

0.28A

4.2 pF

-

-

-

-

RoHS Compliant

-

YES

SIPMOS®

8541.21.00.95

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

1.5nC @ 10V

60V

-

60V

compliant

BSS138-7 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

SIPMOS®

-

-

-

2.5nC @ 10V

100V

-

-

-

BSS138-7 vs BSS119 E7978