BSS138-7-F

Diodes Incorporated BSS138-7-F

Part Number:
BSS138-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2477948-BSS138-7-F
Description:
MOSFET N-CH 50V 200MA SOT23-3
ECAD Model:
Datasheet:
BSS138-7-F

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Specifications
Diodes Incorporated BSS138-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138-7-F.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    3.5Ohm
  • Additional Feature
    HIGH RELIABILITY, LOW THRESHOLD
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    50V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    200mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    50V
  • Power Dissipation-Max
    300mW Ta
  • Element Configuration
    Single
  • Current
    2A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 220mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    200mA Ta
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    200mA
  • Threshold Voltage
    1.2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    50V
  • Nominal Vgs
    1.2 V
  • Feedback Cap-Max (Crss)
    8 pF
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS138-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

BSS138-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V


BSS138-7-F Applications
There are a lot of Diodes Incorporated
BSS138-7-F applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
BSS138-7-F More Descriptions
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 200mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
Product Comparison
The three parts on the right have similar specifications to BSS138-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Series
    Terminal Finish
    HTS Code
    JESD-30 Code
    Configuration
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Reach Compliance Code
    View Compare
  • BSS138-7-F
    BSS138-7-F
    16 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    3.5Ohm
    HIGH RELIABILITY, LOW THRESHOLD
    FET General Purpose Powers
    50V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    200mA
    40
    3
    Not Qualified
    1
    1
    50V
    300mW Ta
    Single
    2A
    ENHANCEMENT MODE
    300mW
    20 ns
    N-Channel
    SWITCHING
    3.5 Ω @ 220mA, 10V
    1.5V @ 250μA
    50pF @ 10V
    200mA Ta
    10ns
    10V
    ±20V
    25 ns
    20 ns
    200mA
    1.2V
    20V
    50V
    1.2 V
    8 pF
    1mm
    2.9mm
    1.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS123 E6433
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    Not Qualified
    1
    -
    -
    360mW Ta
    -
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6 Ω @ 170mA, 10V
    1.8V @ 50μA
    69pF @ 25V
    170mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    6 pF
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SIPMOS®
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    2.67nC @ 10V
    100V
    0.17A
    10Ohm
    100V
    -
  • BSS138W L6433
    -
    -
    -
    Surface Mount
    SC-70, SOT-323
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    3
    Not Qualified
    1
    -
    -
    500mW Ta
    -
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    3.5 Ω @ 220mA, 10V
    1.4V @ 26μA
    43pF @ 25V
    280mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    4.2 pF
    -
    -
    -
    -
    RoHS Compliant
    -
    YES
    SIPMOS®
    MATTE TIN
    8541.21.00.95
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    1.5nC @ 10V
    60V
    0.28A
    -
    60V
    compliant
  • BSS119 E7978
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    -
    -
    N-Channel
    -
    6 Ω @ 170mA, 10V
    2.3V @ 50μA
    78pF @ 25V
    170mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SIPMOS®
    -
    -
    -
    -
    2.5nC @ 10V
    100V
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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