Diodes Incorporated BSS138-7-F
- Part Number:
- BSS138-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2477948-BSS138-7-F
- Description:
- MOSFET N-CH 50V 200MA SOT23-3
- Datasheet:
- BSS138-7-F
Diodes Incorporated BSS138-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138-7-F.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance3.5Ohm
- Additional FeatureHIGH RELIABILITY, LOW THRESHOLD
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC50V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Voltage50V
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Current2A
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5 Ω @ 220mA, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)200mA
- Threshold Voltage1.2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage50V
- Nominal Vgs1.2 V
- Feedback Cap-Max (Crss)8 pF
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS138-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
BSS138-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V
BSS138-7-F Applications
There are a lot of Diodes Incorporated
BSS138-7-F applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
BSS138-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V
BSS138-7-F Applications
There are a lot of Diodes Incorporated
BSS138-7-F applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
BSS138-7-F More Descriptions
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 200mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 200mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to BSS138-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountSeriesTerminal FinishHTS CodeJESD-30 CodeConfigurationGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinReach Compliance CodeView Compare
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BSS138-7-F16 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3yesActive1 (Unlimited)3EAR993.5OhmHIGH RELIABILITY, LOW THRESHOLDFET General Purpose Powers50VMOSFET (Metal Oxide)DUALGULL WING260200mA403Not Qualified1150V300mW TaSingle2AENHANCEMENT MODE300mW20 nsN-ChannelSWITCHING3.5 Ω @ 220mA, 10V1.5V @ 250μA50pF @ 10V200mA Ta10ns10V±20V25 ns20 ns200mA1.2V20V50V1.2 V8 pF1mm2.9mm1.3mmNo SVHCROHS3 CompliantLead Free-------------
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---Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99-LOGIC LEVEL COMPATIBLEFET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING----Not Qualified1--360mW Ta--ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta-4.5V 10V±20V-------6 pF----Non-RoHS Compliant-YESSIPMOS®Tin/Lead (Sn/Pb)8541.21.00.95R-PDSO-G3SINGLE WITH BUILT-IN DIODE2.67nC @ 10V100V0.17A10Ohm100V-
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---Surface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Obsolete1 (Unlimited)3EAR99-LOGIC LEVEL COMPATIBLEFET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260-403Not Qualified1--500mW Ta--ENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta-4.5V 10V±20V-------4.2 pF----RoHS Compliant-YESSIPMOS®MATTE TIN8541.21.00.95R-PDSO-G3SINGLE WITH BUILT-IN DIODE1.5nC @ 10V60V0.28A-60Vcompliant
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------360mW Ta-----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta-4.5V 10V±20V---------------SIPMOS®----2.5nC @ 10V100V----
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