Infineon Technologies BSS131H6327XTSA1

Name: BSS131H6327XTSA1
Brand: Infineon Technologies
SKU: 2478933-BSS131H6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS131H6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2478933-BSS131H6327XTSA1

Description:: MOSFET N-CH 240V 0.11A SOT23

ECAD Model:

Datasheet:: BSS131H6327XTSA1

Specifications

Infineon Technologies BSS131H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS131H6327XTSA1.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
1997
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Voltage
240V
Power Dissipation-Max
360mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
Turn On Delay Time
3.3 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
14 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 56μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
77pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110mA Ta
Gate Charge (Qg) (Max) @ Vgs
3.1nC @ 10V
Rise Time
3.1ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
13.7 ns
Continuous Drain Current (ID)
100mA
Threshold Voltage
1.4V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
240V
Drain to Source Breakdown Voltage
240V
Dual Supply Voltage
240V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1.4 V
Feedback Cap-Max (Crss)
4.2 pF
Height
1.1mm
Width
3.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS131H6327XTSA1 Description
BSS131H6327XTSA1 is a kind of SIPMOS? small-signal transistor manufactured by Infineon Technologies for automotive applications. It acts as a variable current switch that can control the output current based on the input voltage. BSS131H6327XTSA1 transistor is the key active component of all modern electrical appliances and is one of the most important semiconductor devices. Its amplification and switching functions have led to a leap in electronic technology. The appearance of these transistors laid the foundation for the generation of integrated circuits, microprocessors, and computer memory.

BSS131H6327XTSA1 Features
Pb-free lead plating
RoHS compliant
Enhancement mode
Qualified according to AEC Q101
Available in the PG-SOT-23 package

BSS131H6327XTSA1 Applications
DC-DC converter
Motor control
Onboard charge
Telecom
Automotive applications

BSS131H6327XTSA1 More Descriptions

Single N-Channel 240 V 14 Ohm 2.1 nC SIPMOS® Small Signal Mosfet - SOT-23
Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R
240V 110mA 360mW 14´Î@10V100mA 1.8V@56Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET N-CH 240V 0.1A Small Signal SOT-23
Transistor Polarity:n Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:110Ma; On Resistance Rds(On):7.7Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: Yes
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 11 / Drain-Source Voltage (Vds) V = 240 / ON Resistance (Rds(on)) Ohm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 64.5 / Rise Time ns = 3.1 / Turn-OFF Delay Time ns = 13.7 / Turn-ON Delay Time ns = 3.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360

Product Comparison

The three parts on the right have similar specifications to BSS131H6327XTSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Number of Channels

Voltage

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Transistor Application

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

View Compare
BSS131H6327XTSA1

Infineon Technologies

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1997

e3

Active

1 (Unlimited)

3

SMD/SMT

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

1

240V

360mW Ta

ENHANCEMENT MODE

360mW

3.3 ns

N-Channel

14 Ω @ 100mA, 10V

1.8V @ 56μA

Halogen Free

77pF @ 25V

110mA Ta

3.1nC @ 10V

3.1ns

4.5V 10V

±20V

13.7 ns

100mA

1.4V

20V

240V

240V

240V

150°C

1.4 V

4.2 pF

1.1mm

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS123 E6433

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

Obsolete

1 (Unlimited)

3

-

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

SINGLE WITH BUILT-IN DIODE

-

-

360mW Ta

ENHANCEMENT MODE

-

-

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

-

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

6 pF

-

-

-

-

Non-RoHS Compliant

-

YES

Tin/Lead (Sn/Pb)

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

SWITCHING

100V

0.17A

10Ohm

100V

-

-

-

BSS131H6327XTSA1 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

-

-

Surface Mount

SC-70, SOT-323

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

-

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

-

-

500mW Ta

ENHANCEMENT MODE

-

-

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

-

43pF @ 25V

280mA Ta

1.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

4.2 pF

-

-

-

-

RoHS Compliant

-

YES

MATTE TIN

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

-

60V

0.28A

-

60V

260

compliant

40

BSS131H6327XTSA1 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

360mW Ta

-

-

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

-

78pF @ 25V

170mA Ta

2.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

-

-

-

-

-

BSS131H6327XTSA1 vs BSS119 E7978