BSS127SSN-7

Diodes Incorporated BSS127SSN-7

Part Number:
BSS127SSN-7
Manufacturer:
Diodes Incorporated
Ventron No:
3070280-BSS127SSN-7
Description:
MOSFET N-CH 600V 50MA SC59
ECAD Model:
Datasheet:
BSS127SSN-7

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Specifications
Diodes Incorporated BSS127SSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS127SSN-7.
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    610mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    160 Ω @ 16mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    21.8pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    50mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.08nC @ 10V
  • Rise Time
    7.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    168 ns
  • Turn-Off Delay Time
    28.7 ns
  • Continuous Drain Current (ID)
    50mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.045A
  • Drain to Source Breakdown Voltage
    600V
  • Height
    1.3mm
  • Length
    3.1mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS127SSN-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.045A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

BSS127SSN-7 Features
a continuous drain current (ID) of 50mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28.7 ns


BSS127SSN-7 Applications
There are a lot of Diodes Incorporated
BSS127SSN-7 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
BSS127SSN-7 More Descriptions
Mosfet, N-Ch, 600V, 0.05A, Sc-59 Rohs Compliant: Yes |Diodes Inc. BSS127SSN-7
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET, 600V VDS, 20±V VGS,Diodes Inc SCT
Small Signal Field-Effect Transistor, 0.045A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 600V, 0.05A, SC-59;
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to BSS127SSN-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Series
    Terminal Finish
    HTS Code
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Reach Compliance Code
    View Compare
  • BSS127SSN-7
    BSS127SSN-7
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    610mW Ta
    Single
    ENHANCEMENT MODE
    1.25W
    5 ns
    N-Channel
    SWITCHING
    160 Ω @ 16mA, 10V
    4.5V @ 250μA
    21.8pF @ 25V
    50mA Ta
    1.08nC @ 10V
    7.2ns
    5V 10V
    ±20V
    168 ns
    28.7 ns
    50mA
    20V
    0.045A
    600V
    1.3mm
    3.1mm
    1.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS123 E6433
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    1
    -
    360mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6 Ω @ 170mA, 10V
    1.8V @ 50μA
    69pF @ 25V
    170mA Ta
    2.67nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.17A
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SIPMOS®
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    R-PDSO-G3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    100V
    10Ohm
    100V
    6 pF
    -
  • BSS138W L6433
    -
    -
    -
    Surface Mount
    SC-70, SOT-323
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    -
    500mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    3.5 Ω @ 220mA, 10V
    1.4V @ 26μA
    43pF @ 25V
    280mA Ta
    1.5nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.28A
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    YES
    SIPMOS®
    MATTE TIN
    8541.21.00.95
    R-PDSO-G3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60V
    -
    60V
    4.2 pF
    compliant
  • BSS119 E7978
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    -
    N-Channel
    -
    6 Ω @ 170mA, 10V
    2.3V @ 50μA
    78pF @ 25V
    170mA Ta
    2.5nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SIPMOS®
    -
    -
    -
    -
    -
    100V
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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