Diodes Incorporated BSS127SSN-7
- Part Number:
- BSS127SSN-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070280-BSS127SSN-7
- Description:
- MOSFET N-CH 600V 50MA SC59
- Datasheet:
- BSS127SSN-7
Diodes Incorporated BSS127SSN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS127SSN-7.
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max610mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160 Ω @ 16mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds21.8pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.08nC @ 10V
- Rise Time7.2ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)168 ns
- Turn-Off Delay Time28.7 ns
- Continuous Drain Current (ID)50mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.045A
- Drain to Source Breakdown Voltage600V
- Height1.3mm
- Length3.1mm
- Width1.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS127SSN-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.045A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
BSS127SSN-7 Features
a continuous drain current (ID) of 50mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28.7 ns
BSS127SSN-7 Applications
There are a lot of Diodes Incorporated
BSS127SSN-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.045A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
BSS127SSN-7 Features
a continuous drain current (ID) of 50mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28.7 ns
BSS127SSN-7 Applications
There are a lot of Diodes Incorporated
BSS127SSN-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
BSS127SSN-7 More Descriptions
Mosfet, N-Ch, 600V, 0.05A, Sc-59 Rohs Compliant: Yes |Diodes Inc. BSS127SSN-7
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET, 600V VDS, 20±V VGS,Diodes Inc SCT
Small Signal Field-Effect Transistor, 0.045A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 600V, 0.05A, SC-59;
French Electronic Distributor since 1988
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET, 600V VDS, 20±V VGS,Diodes Inc SCT
Small Signal Field-Effect Transistor, 0.045A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 600V, 0.05A, SC-59;
French Electronic Distributor since 1988
The three parts on the right have similar specifications to BSS127SSN-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountSeriesTerminal FinishHTS CodeJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)Reach Compliance CodeView Compare
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BSS127SSN-718 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311610mW TaSingleENHANCEMENT MODE1.25W5 nsN-ChannelSWITCHING160 Ω @ 16mA, 10V4.5V @ 250μA21.8pF @ 25V50mA Ta1.08nC @ 10V7.2ns5V 10V±20V168 ns28.7 ns50mA20V0.045A600V1.3mm3.1mm1.7mmNo SVHCROHS3 CompliantLead Free-------------
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---Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING---1-360mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta2.67nC @ 10V-4.5V 10V±20V----0.17A-----Non-RoHS Compliant-YESSIPMOS®Tin/Lead (Sn/Pb)8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE100V10Ohm100V6 pF-
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---Surface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Obsolete1 (Unlimited)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604031-500mW Ta-ENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta1.5nC @ 10V-4.5V 10V±20V----0.28A-----RoHS Compliant-YESSIPMOS®MATTE TIN8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE60V-60V4.2 pFcompliant
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------360mW Ta----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta2.5nC @ 10V-4.5V 10V±20V-------------SIPMOS®-----100V----
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