Infineon Technologies BSS127H6327XTSA2

Name: BSS127H6327XTSA2
Brand: Infineon Technologies
SKU: 2484065-BSS127H6327XTSA2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS127H6327XTSA2

Manufacturer:: Infineon Technologies

Ventron No:: 2484065-BSS127H6327XTSA2

Description:: MOSFET N-CH 600V 0.021A SOT-23

ECAD Model:

Datasheet:: BSS127H6327XTSA2

Specifications

Infineon Technologies BSS127H6327XTSA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS127H6327XTSA2.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
6.1 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
500 Ω @ 16mA, 10V
Vgs(th) (Max) @ Id
2.6V @ 8μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
28pF @ 25V
Current - Continuous Drain (Id) @ 25°C
21mA Ta
Gate Charge (Qg) (Max) @ Vgs
1nC @ 10V
Rise Time
9.7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
21mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
600V
Drain-source On Resistance-Max
600Ohm
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS127H6327XTSA2 Description
BSS127H6327XTSA2 is a type of SIPMOS? small-signal transistor manufactured by Infineon Technologies for automotive applications. It acts as a variable current switch that can control the output current based on the input voltage. It is the key active component of all modern electrical appliances and is one of the most important semiconductor devices. Its amplification and switching functions have led to a leap in electronic technology. The appearance of these transistors laid the foundation for the generation of integrated circuits, microprocessors, and computer memory.

BSS127H6327XTSA2 Features
Ultra logic level
Avalanche rated
Enhancement mode
Qualified according to AEC Q101
Available in the PG-SOT-23 package

BSS127H6327XTSA2 Applications
DC-DC converter
Motor control
Telecom
Automotive applications

BSS127H6327XTSA2 More Descriptions

Single N-Channel 600 V 500 Ohm 0.65 nC SIPMOS® Small Signal Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
MOSFET, N CH, 600V, 0.021A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21mA; Source Voltage Vds:600V; On Resistance
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 21 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

Product Comparison

The three parts on the right have similar specifications to BSS127H6327XTSA2.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Terminal Finish

HTS Code

Subcategory

JESD-30 Code

Configuration

Transistor Application

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

Reach Compliance Code

View Compare
BSS127H6327XTSA2

Infineon Technologies

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2010

e3

yes

Active

1 (Unlimited)

3

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

6.1 ns

N-Channel

500 Ω @ 16mA, 10V

2.6V @ 8μA

Halogen Free

28pF @ 25V

21mA Ta

1nC @ 10V

9.7ns

4.5V 10V

±20V

14 ns

21mA

20V

600V

600Ohm

1mm

2.9mm

1.3mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS123 E6433

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

-

Obsolete

1 (Unlimited)

3

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

Not Qualified

1

360mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

-

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

10Ohm

-

-

-

-

Non-RoHS Compliant

-

YES

Tin/Lead (Sn/Pb)

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

SWITCHING

100V

0.17A

100V

6 pF

-

BSS127H6327XTSA2 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

-

-

Surface Mount

SC-70, SOT-323

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

-

Obsolete

1 (Unlimited)

3

EAR99

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

Not Qualified

1

500mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

-

43pF @ 25V

280mA Ta

1.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

YES

MATTE TIN

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

-

60V

0.28A

60V

4.2 pF

compliant

BSS127H6327XTSA2 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

-

78pF @ 25V

170mA Ta

2.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

-

-

-

BSS127H6327XTSA2 vs BSS119 E7978