ON Semiconductor BSS123LT1G
- Part Number:
- BSS123LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2481076-BSS123LT1G
- Description:
- MOSFET N-CH 100V 170MA SOT-23
- Datasheet:
- BSS123LT1G
ON Semiconductor BSS123LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSS123LT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance6Ohm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating170mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Power Dissipation-Max225mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation225mW
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6 Ω @ 100mA, 10V
- Vgs(th) (Max) @ Id2.6V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
- Current - Continuous Drain (Id) @ 25°C170mA Ta
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)170mA
- Threshold Voltage800mV
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Nominal Vgs20 V
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS123LT1G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 20pF @ 25V.This device conducts a continuous drain current (ID) of 170mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 800mV threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS123LT1G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV
BSS123LT1G Applications
There are a lot of ON Semiconductor
BSS123LT1G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 20pF @ 25V.This device conducts a continuous drain current (ID) of 170mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 800mV threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS123LT1G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV
BSS123LT1G Applications
There are a lot of ON Semiconductor
BSS123LT1G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
BSS123LT1G More Descriptions
Transistor: N-MOSFET, unipolar, 100V, 0.17A, 6ohm, 225mW, -55 150 deg.C, SMD, SOT23, AEC-Q1
BSS123L: Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23
MOSFET; Power; N-Ch; VDSS 100VDC; 5 Ohms; 0.17A; SOT-23; PD 225mW; 3k Reel
N-Channel 100 V 6 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
Power MOSFET 170 mA, 100 V, N-Channel SOT-23
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
BSS123LT1G ON Semiconductor MOSFET N-Channel 170MA100V SOT23
Mosfet Transistor, N Channel, 170 Ma, 100 V, 6 Ohm, 10 Vdc, 20 V Rohs Compliant: Yes |Onsemi BSS123LT1G
MOSFET, N, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10VDC; Threshold Voltage Vgs: 800mV; Power Dissipati
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
BSS123L: Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23
MOSFET; Power; N-Ch; VDSS 100VDC; 5 Ohms; 0.17A; SOT-23; PD 225mW; 3k Reel
N-Channel 100 V 6 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
Power MOSFET 170 mA, 100 V, N-Channel SOT-23
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
BSS123LT1G ON Semiconductor MOSFET N-Channel 170MA100V SOT23
Mosfet Transistor, N Channel, 170 Ma, 100 V, 6 Ohm, 10 Vdc, 20 V Rohs Compliant: Yes |Onsemi BSS123LT1G
MOSFET, N, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10VDC; Threshold Voltage Vgs: 800mV; Power Dissipati
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
The three parts on the right have similar specifications to BSS123LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountSeriesTerminal FinishAdditional FeatureHTS CodeJESD-30 CodeQualification StatusConfigurationGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)Reach Compliance CodeView Compare
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BSS123LT1GACTIVE (Last Updated: 3 days ago)15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJCut Tape (CT)2003e3yesActive1 (Unlimited)3EAR996OhmFET General Purpose Power100VMOSFET (Metal Oxide)DUALGULL WING260170mA4031225mW TaSingleENHANCEMENT MODE225mW20 nsN-ChannelSWITCHING6 Ω @ 100mA, 10V2.6V @ 1mA20pF @ 25V170mA Ta10V±20V40 ns170mA800mV20V100V20 V1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------------
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----Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99-FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING----1360mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta4.5V 10V±20V-----------Non-RoHS Compliant-YESSIPMOS®Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE2.67nC @ 10V100V0.17A10Ohm100V6 pF-
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----Surface MountSC-70, SOT-323-SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Obsolete1 (Unlimited)3EAR99-FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260-4031500mW Ta-ENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta4.5V 10V±20V-----------RoHS Compliant-YESSIPMOS®MATTE TINLOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE1.5nC @ 10V60V0.28A-60V4.2 pFcompliant
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----Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-------360mW Ta----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta4.5V 10V±20V--------------SIPMOS®------2.5nC @ 10V100V-----
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