Infineon Technologies BSS123E6327

Name: BSS123E6327
Brand: Infineon Technologies
SKU: 2492091-BSS123E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS123E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2492091-BSS123E6327

Description:: MOSFET N-CH 100V 170MA SOT-23

ECAD Model:

Datasheet:: BSS123 Datasheet

Specifications

Infineon Technologies BSS123E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS123E6327.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
1999
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
170mA
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
360mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
69pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Gate Charge (Qg) (Max) @ Vgs
2.67nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
170mA
Gate to Source Voltage (Vgs)
20V
Feedback Cap-Max (Crss)
6 pF
RoHS Status
RoHS Compliant
Lead Free
Contains Lead

Description

BSS123E6327 Description
The Infineon Technologies BSS123E6327 is a SIPMOS? Small-Signal Transistor with a SOT-23 Package.

BSS123E6327 Features
N channel
Enhancement mode
Logic Level
VGS(th) = 0.8...2.0V

BSS123E6327 Applications
Automotive
Consumer
DC-DC

BSS123E6327 More Descriptions

SIPMOS Small-Signal-Transistor 600V 6Ω 0.1A PGSOT23 PB FREE
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:0.17A; On Resistance, Rds(on):6ohm; Termination:SMD; Current, Idm pulse:0.68A; Drain-Source Breakdown Voltage:100V; Package/Case:SOT-23 RoHS Compliant: Yes
MOSFET, N, SOT-23; Transistor type:MOSFET; Voltage, Vds typ:100V; Current, Id cont:0.17A; Resistance, Rds on:6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1.4V; Case style:SOT-23 (TO-236); Current, Idm pulse:0.68A; Depth, external:2.5mm; Length / Height, external:1.12mm; Marking, SMD:SAs; Pins, No. of:3; Power dissipation:0.36W; Power, Pd:0.36W; Power, Ptot:0.36W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:100V; Voltage, Vgs th max:2V; Width, external:3.05mm; Width, tape:8mm

Product Comparison

The three parts on the right have similar specifications to BSS123E6327.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Feedback Cap-Max (Crss)

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Surface Mount

HTS Code

JESD-30 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
BSS123E6327

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1999

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

170mA

NOT SPECIFIED

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

360mW

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

5ns

4.5V 10V

±20V

170mA

20V

6 pF

RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

-

4.5V 10V

±20V

-

-

-

ROHS3 Compliant

-

60V

-

-

-

-

-

-

BSS123E6327 vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

-

-

6 pF

Non-RoHS Compliant

-

100V

YES

8541.21.00.95

R-PDSO-G3

0.17A

10Ohm

100V

BSS123E6327 vs BSS123 E6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

100V

-

-

-

-

-

-

BSS123E6327 vs BSS119 E7978