Fairchild/ON Semiconductor BSS123

Name: BSS123
Brand: Fairchild/ON Semiconductor
SKU: 2477896-BSS123
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS123

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477896-BSS123

Description:: MOSFET N-CH 100V 170MA SOT-23

ECAD Model:

Datasheet:: BSS123

Specifications

Fairchild/ON Semiconductor BSS123 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BSS123.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
6Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
170mA
Base Part Number
BSS123
Number of Elements
1
Number of Channels
1
Voltage
100V
Power Dissipation-Max
360mW Ta
Element Configuration
Single
Current
15A
Power Dissipation
360mW
Turn On Delay Time
1.7 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
73pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 10V
Rise Time
9ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
170mA
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Input Capacitance
73pF
Max Junction Temperature (Tj)
150°C
Drain to Source Resistance
1.2Ohm
Rds On Max
6 Ω
Nominal Vgs
1.7 V
Height
1.11mm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.

BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V RDS(ON) = 10W @ 4.5 V VGS For extremely low RDS, a high-density cell design is used (ON) Rugged and dependable SOT-23 surface mount package is a compact industry standard.

BSS123 Applications
Switching applications.

BSS123 More Descriptions

Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23
N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 170 mA, 6Ω
ON Semi SMD MOSFET NFET 100V 170mA 6Ω 150°C SOT-23 BSS123
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Current Temperature:25°C; Device Marking:BSS123; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360mW; Pulse Current Idm:680mA; SMD Marking:SA; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to BSS123.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
BSS123

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

2003

Active

1 (Unlimited)

6Ohm

150°C

-55°C

100V

MOSFET (Metal Oxide)

170mA

BSS123

1

1

100V

360mW Ta

Single

15A

360mW

1.7 ns

N-Channel

6Ohm @ 170mA, 10V

2V @ 1mA

73pF @ 25V

170mA Ta

2.5nC @ 10V

9ns

100V

4.5V 10V

±20V

9 ns

17 ns

170mA

1.7V

20V

100V

100V

73pF

150°C

1.2Ohm

6 Ω

1.7 V

1.11mm

2.92mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

Discontinued

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

-

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SIPMOS®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS123 vs BSS138N E8004
BSS138W L6433

Infineon Technologies

-

-

-

-

Surface Mount

SC-70, SOT-323

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2007

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

-

-

500mW Ta

-

-

-

-

N-Channel

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

-

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

SIPMOS®

YES

SILICON

e3

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

DUAL

GULL WING

260

compliant

40

3

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

0.28A

60V

4.2 pF

BSS123 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2002

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

-

100V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SIPMOS®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS123 vs BSS119 E7978