Diodes Incorporated BSS123-7-F
- Part Number:
- BSS123-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478560-BSS123-7-F
- Description:
- MOSFET N-CH 100V 170MA SOT23-3
- Datasheet:
- BSS123-7-F
Diodes Incorporated BSS123-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS123-7-F.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance6Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating170mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Voltage100V
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Current15A
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6 Ω @ 170mA, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C170mA Ta
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)170mA
- Threshold Voltage1.4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs1.4 V
- Feedback Cap-Max (Crss)6 pF
- Height1.1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS123-7-F Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 60pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170mA amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BSS123-7-F Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
a threshold voltage of 1.4V
BSS123-7-F Applications
There are a lot of Diodes Incorporated
BSS123-7-F applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 60pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170mA amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BSS123-7-F Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
a threshold voltage of 1.4V
BSS123-7-F Applications
There are a lot of Diodes Incorporated
BSS123-7-F applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
BSS123-7-F More Descriptions
Transistor: N-MOSFET; unipolar; 100V; 170mA; 6ohm; 300mW; -55 150 deg.C; SMD; SOT23
N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Source Voltage Vds:100V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 170mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Source Voltage Vds:100V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 170mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to BSS123-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountSeriesAdditional FeatureHTS CodeJESD-30 CodeQualification StatusConfigurationGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinReach Compliance CodeView Compare
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BSS123-7-F16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1999e3yesActive1 (Unlimited)3EAR996OhmMatte Tin (Sn)FET General Purpose Power100VMOSFET (Metal Oxide)DUALGULL WING260170mA40311100V300mW TaSingle15AENHANCEMENT MODE300mW8 nsN-ChannelSWITCHING6 Ω @ 170mA, 10V2V @ 1mA60pF @ 25V170mA Ta8ns10V±20V8 ns13 ns170mA1.4V20V100V150°C1.4 V6 pF1.1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free--------------
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--Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99-Tin/Lead (Sn/Pb)FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING----1--360mW Ta--ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta-4.5V 10V±20V--------6 pF-----Non-RoHS Compliant-YESSIPMOS®LOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE2.67nC @ 10V100V0.17A10Ohm100V-
-
--Surface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Obsolete1 (Unlimited)3EAR99-MATTE TINFET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260-4031--500mW Ta--ENHANCEMENT MODE--N-Channel-3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta-4.5V 10V±20V--------4.2 pF-----RoHS Compliant-YESSIPMOS®LOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE1.5nC @ 10V60V0.28A-60Vcompliant
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--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)---------360mW Ta-----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta-4.5V 10V±20V-----------------SIPMOS®-----2.5nC @ 10V100V----
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