Nexperia USA Inc. BSS123,215

Name: BSS123,215
Brand: Nexperia USA Inc.
SKU: 2478917-BSS123,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS123,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478917-BSS123,215

Description:: MOSFET N-CH 100V 150MA SOT-23

ECAD Model:

Datasheet:: BSS123,215

Specifications

Nexperia USA Inc. BSS123,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS123,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
Published
2000
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
250mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
40pF @ 25V
Current - Continuous Drain (Id) @ 25°C
150mA Ta
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
150mA
Drain Current-Max (Abs) (ID)
0.15A
Drain-source On Resistance-Max
6Ohm
DS Breakdown Voltage-Min
100V
Feedback Cap-Max (Crss)
10 pF
RoHS Status
ROHS3 Compliant

Description

BSS123,215 Overview
A device's maximum input capacitance is 40pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 150mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

BSS123,215 Features
a continuous drain current (ID) of 150mA
a 100V drain to source voltage (Vdss)

BSS123,215 Applications
There are a lot of Nexperia USA Inc.
BSS123,215 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

BSS123,215 More Descriptions

Transistor: N-MOSFET; unipolar; 100V; 0.15A; 6ohm; 0.25W; -55 150 deg.C; SMD; SOT23
Transistor MOSFET N-CH 100V 0.15A 3-Pin TO-236AB T/R
Transistor MOSFET N-Ch. 0,15A/100V SOT23 BSS 123
BSS123 Series 100 V 6 O 25 mW N-Channel TrenchMOS Logic Level FET - SOT-23
100V 150mA 250mW 6¦¸@10V,120mA 2.8V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, N CH, 100V, 150MA, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:250mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 150 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 250

Product Comparison

The three parts on the right have similar specifications to BSS123,215.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

RoHS Status

Gate Charge (Qg) (Max) @ Vgs

Additional Feature

Subcategory

Reach Compliance Code

JESD-30 Code

Qualification Status

View Compare
BSS123,215

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchMOS™

2000

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

8541.21.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

1

SINGLE WITH BUILT-IN DIODE

250mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6 Ω @ 120mA, 10V

2.8V @ 1mA

40pF @ 25V

150mA Ta

100V

10V

±20V

150mA

0.15A

6Ohm

100V

10 pF

ROHS3 Compliant

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

-

Discontinued

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

360mW Ta

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

60V

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

1.4nC @ 10V

-

-

-

-

-

BSS123,215 vs BSS138N E8004
BSS138W L6433

Infineon Technologies

-

Surface Mount

SC-70, SOT-323

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

8541.21.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

ENHANCEMENT MODE

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

60V

4.5V 10V

±20V

-

0.28A

-

60V

4.2 pF

RoHS Compliant

1.5nC @ 10V

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

compliant

R-PDSO-G3

Not Qualified

BSS123,215 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

360mW Ta

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

100V

4.5V 10V

±20V

-

-

-

-

-

-

2.5nC @ 10V

-

-

-

-

-

BSS123,215 vs BSS119 E7978