Infineon Technologies BSP316PH6327XTSA1

Name: BSP316PH6327XTSA1
Brand: Infineon Technologies
SKU: 3070213-BSP316PH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP316PH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3070213-BSP316PH6327XTSA1

Description:: MOSFET P-CH 100V 0.68A SOT223

ECAD Model:

Datasheet:: BSP316PH6327XTSA1

Specifications

Infineon Technologies BSP316PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP316PH6327XTSA1.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SIPMOS®
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Power Dissipation-Max
1.8W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.8W
Case Connection
DRAIN
Turn On Delay Time
4.7 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
1.8 Ω @ 680mA, 10V
Vgs(th) (Max) @ Id
2V @ 170μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
146pF @ 25V
Current - Continuous Drain (Id) @ 25°C
680mA Ta
Gate Charge (Qg) (Max) @ Vgs
6.4nC @ 10V
Rise Time
7.5ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
25.9 ns
Turn-Off Delay Time
67.4 ns
Continuous Drain Current (ID)
680mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
-100V
Drain Current-Max (Abs) (ID)
0.68A
Pulsed Drain Current-Max (IDM)
2.72A
Height
1.6mm
Length
6.5mm
Width
3.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSP316PH6327XTSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 146pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 680mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.68A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 67.4 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2.72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by -100V, it supports the maximal dual supply voltage.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

BSP316PH6327XTSA1 Features
a continuous drain current (ID) of 680mA
the turn-off delay time is 67.4 ns
based on its rated peak drain current 2.72A.
a 100V drain to source voltage (Vdss)

BSP316PH6327XTSA1 Applications
There are a lot of Infineon Technologies
BSP316PH6327XTSA1 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

BSP316PH6327XTSA1 More Descriptions

Trans MOSFET P-CH 100V 0.68A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel 100 V 1.8 Ohm 5.1 nC SIPMOS® Small Signal Mosfet - SOT-223
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:680Ma; On Resistance Rds(On):1.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
MOSFET, P-CH, -100V, -0.68A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -680mA; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = -100 / ON Resistance (Rds(on)) Ohm = 1.8 / Gate-Source Voltage V = 20 / Fall Time ns = 25.9 / Rise Time ns = 7.5 / Turn-OFF Delay Time ns = 67.4 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) W = 1.8

Certification