BSP315P-E6327

Infineon Technologies BSP315P-E6327

Part Number:
BSP315P-E6327
Manufacturer:
Infineon Technologies
Ventron No:
2492035-BSP315P-E6327
Description:
MOSFET P-CH 60V 1.17A SOT-223
ECAD Model:
Datasheet:
BSP315P

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Specifications
Infineon Technologies BSP315P-E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP315P-E6327.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Supplier Device Package
    PG-SOT223-4
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SIPMOS®
  • Published
    1999
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -1.17A
  • Number of Elements
    1
  • Power Dissipation-Max
    1.8W Ta
  • Power Dissipation
    1.8W
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    800mOhm @ 1.17A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 160μA
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.17A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    7.8nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    1.17A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    160pF
  • Rds On Max
    800 mΩ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BSP315P-E6327 Overview
The maximum input capacitance of this device is 160pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.17A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSP315P-E6327 Features
a continuous drain current (ID) of 1.17A
a 60V drain to source voltage (Vdss)


BSP315P-E6327 Applications
There are a lot of Infineon Technologies
BSP315P-E6327 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
BSP315P-E6327 More Descriptions
MOSFET P-CH 60V 1.17A SOT-223
CAP CER 8.3PF 25V C0G/NP0 01005
Other Transistors
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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