Infineon Technologies BSP300H6327XUSA1

BSP300H6327XUSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 36 mJ.A device's maximal input capacitance is 230pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 190mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 800V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

BSP300H6327XUSA1 Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 190mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 27 ns


BSP300H6327XUSA1 Applications
There are a lot of Infineon Technologies
BSP300H6327XUSA1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples