Infineon Technologies BSP299 E6327

Name: BSP299 E6327
Brand: Infineon Technologies
SKU: 2492919-BSP299 E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP299 E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2492919-BSP299 E6327

Description:: MOSFET N-CH 500V 400MA SOT-223

ECAD Model:

Datasheet:: BSP299

Specifications

Infineon Technologies BSP299 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP299 E6327.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2007
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
255
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.8W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
400mA Ta
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.4A
Drain-source On Resistance-Max
4Ohm
Pulsed Drain Current-Max (IDM)
1.6A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
130 mJ
RoHS Status
Non-RoHS Compliant

Description

BSP299 E6327 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 0.4A.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.6A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

BSP299 E6327 Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 1.6A.
a 500V drain to source voltage (Vdss)

BSP299 E6327 Applications
There are a lot of Infineon Technologies
BSP299 E6327 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Certification