Infineon Technologies BSP298 E6327

BSP298 E6327 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 130 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 400pF @ 25V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 2A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 400V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.

BSP298 E6327 Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 2A.
a 400V drain to source voltage (Vdss)


BSP298 E6327 Applications
There are a lot of Infineon Technologies
BSP298 E6327 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification