Infineon Technologies BSP297 E6327

Name: BSP297 E6327
Brand: Infineon Technologies
SKU: 2492962-BSP297 E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP297 E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2492962-BSP297 E6327

Description:: MOSFET N-CH 200V 660MA SOT-223

ECAD Model:

Datasheet:: BSP297 E6327

Specifications

Infineon Technologies BSP297 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP297 E6327.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2007
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.8W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds
357pF @ 25V
Current - Continuous Drain (Id) @ 25°C
660mA Ta
Gate Charge (Qg) (Max) @ Vgs
16.1nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.66A
Pulsed Drain Current-Max (IDM)
2.64A
DS Breakdown Voltage-Min
200V
RoHS Status
Non-RoHS Compliant

Description

BSP297 E6327 Overview
A device's maximum input capacitance is 357pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 0.66A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 2.64A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

BSP297 E6327 Features
based on its rated peak drain current 2.64A.
a 200V drain to source voltage (Vdss)

BSP297 E6327 Applications
There are a lot of Infineon Technologies
BSP297 E6327 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

BSP297 E6327 More Descriptions

MOSFET N-CH 200V 660MA SOT-223
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
CAP CER 8.2PF 25V C0G/NP0 01005

Certification