Nexperia USA Inc. BSP250,115

Name: BSP250,115
Brand: Nexperia USA Inc.
SKU: 2848609-BSP250,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP250,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2848609-BSP250,115

Description:: MOSFET P-CH 30V 3A SOT223

ECAD Model:

Datasheet:: BSP250,115

Specifications

Nexperia USA Inc. BSP250,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSP250,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.75
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.65W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5W
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 20V
Current - Continuous Drain (Id) @ 25°C
3A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
-2.8mA
Drain Current-Max (Abs) (ID)
3A
Drain-source On Resistance-Max
0.4Ohm
Pulsed Drain Current-Max (IDM)
12A
RoHS Status
ROHS3 Compliant

Description

BSP250,115 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -2.8mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 12A.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

BSP250,115 Features
a continuous drain current (ID) of -2.8mA
based on its rated peak drain current 12A.
a 30V drain to source voltage (Vdss)

BSP250,115 Applications
There are a lot of Nexperia USA Inc.
BSP250,115 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

BSP250,115 More Descriptions

BSP250 Series -30 V 250 mOhm 5W P-Ch Enhancement Mode D-MOS Transistor - SOT-223
NEXPERIA - BSP250,115 - MOSFET Transistor, P Channel, -1 A, -30 V, 250 mohm, -10 V, -2.8 V RoHS Compliant: Yes
Trans MOSFET P-CH 30V 3A 4-Pin(3 Tab) SOT-223 T/R
30V 3A 1.65W 250m¦¸@10V,1A 2.8V@1mA P Channel SOT-223 MOSFETs ROHS
BSP250 - P-channel vertical D-MOS intermediate level FET
Power Field-Effect Transistor, 3A I(D), 30V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
P-Channel enhancement mode ver
MOSFET P-CH 30V 3A SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.8V; Power Dissipation Pd:5W; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.8mA; Package / Case:SOT-223; Power Dissipation Pd:5W; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:-30V; Voltage Vgs Max:-2.8V; Voltage Vgs Rds on Measurement:-10V

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