Infineon Technologies BSO4822

Name: BSO4822
Brand: Infineon Technologies
SKU: 3586832-BSO4822
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSO4822

Manufacturer:: Infineon Technologies

Ventron No:: 3586832-BSO4822

Description:: MOSFET N-CH 30V 12.7A 8-SOIC

ECAD Model:

Datasheet:: BSO4822

Specifications

Infineon Technologies BSO4822 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSO4822.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2002
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
12.7A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id
2V @ 55μA
Input Capacitance (Ciss) (Max) @ Vds
1640pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12.7A Ta
Gate Charge (Qg) (Max) @ Vgs
26.2nC @ 5V
Rise Time
38ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
12.7A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.01Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
51A
Avalanche Energy Rating (Eas)
165 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BSO4822 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 165 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1640pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12.7A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 51A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

BSO4822 Features
the avalanche energy rating (Eas) is 165 mJ
a continuous drain current (ID) of 12.7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 51A.

BSO4822 Applications
There are a lot of Infineon Technologies
BSO4822 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BSO4822 More Descriptions

MOSFET N-CH 30V 12.7A 8-SOIC
Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to BSO4822.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

View Compare
BSO4822

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2002

e3

Obsolete

1 (Unlimited)

8

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

12.7A

NOT SPECIFIED

8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

2.5W

N-Channel

SWITCHING

10m Ω @ 12.7A, 10V

2V @ 55μA

1640pF @ 25V

12.7A Ta

26.2nC @ 5V

38ns

4.5V 10V

±20V

16 ns

30 ns

12.7A

20V

0.01Ohm

30V

51A

165 mJ

RoHS Compliant

Lead Free

-

-

-

-

-
BSO4822T

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

30V

MOSFET (Metal Oxide)

-

-

-

12.7A

-

-

-

-

-

2.5W Ta

-

-

N-Channel

-

10mOhm @ 12.7A, 10V

2V @ 55μA

1640pF @ 25V

12.7A Ta

26.2nC @ 5V

38ns

4.5V 10V

±20V

-

-

12.7A

-

-

-

-

-

ROHS3 Compliant

Lead Free

8-SO

30V

1.64nF

10 mΩ

BSO4822 vs BSO4822T
BSO4410T

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

30V

MOSFET (Metal Oxide)

-

-

-

11.1A

-

-

-

-

-

2.5W Ta

-

-

N-Channel

-

13mOhm @ 11.1A, 10V

2V @ 42μA

1280pF @ 25V

11.1A Ta

21nC @ 5V

33ns

4.5V 10V

±20V

-

-

11.1A

-

-

-

-

-

RoHS Compliant

Lead Free

8-SO

30V

1.28nF

13 mΩ

BSO4822 vs BSO4410T
BSO4420

Infineon Technologies

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2002

e3

Obsolete

1 (Unlimited)

8

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

13A

NOT SPECIFIED

8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

7.8m Ω @ 13A, 10V

2V @ 80μA

2213pF @ 25V

13A Ta

33.7nC @ 5V

44ns

4.5V 10V

±20V

-

-

13A

-

-

-

52A

230 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

BSO4822 vs BSO4420