Nexperia USA Inc. BSN20,215

Name: BSN20,215
Brand: Nexperia USA Inc.
SKU: 3070983-BSN20,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSN20,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3070983-BSN20,215

Description:: MOSFET N-CH 50V 173MA SOT-23

ECAD Model:

Datasheet:: BSN20

Specifications

Nexperia USA Inc. BSN20,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSN20,215.

Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Reach Compliance Code
compliant
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
830mW Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 10V
Current - Continuous Drain (Id) @ 25°C
173mA Ta
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.173A
Drain-source On Resistance-Max
20Ohm
DS Breakdown Voltage-Min
50V
Feedback Cap-Max (Crss)
8 pF
RoHS Status
RoHS Compliant

Description

BSN20,215 Overview
The maximum input capacitance of this device is 25pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 0.173A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 50V.The drain-to-source voltage (Vdss) of this transistor needs to be at 50V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

BSN20,215 Features
a 50V drain to source voltage (Vdss)

BSN20,215 Applications
There are a lot of Nexperia USA Inc.
BSN20,215 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

BSN20,215 More Descriptions

Transistor MOSFET Negative Channel 50 Volt 0.173A 3-Pin TO-236AB T/R
NEXPERIA - BSN20,215 - MOSFET, N CHANNEL, 50V, 173MA, 3-SOT-23
MOSFET, N CH, 50V, 0.173A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:173mA; Source Voltage Vds:50V; On Resistance
MOSFET, N CH, 50V, 0.173A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 173mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 830mW; Transistor Case Style: TO-236AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C

Product Comparison

The three parts on the right have similar specifications to BSN20,215.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

RoHS Status

Factory Lead Time

Mount

Published

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Operating Temperature (Max)

Gate Charge (Qg) (Max) @ Vgs

Continuous Drain Current (ID)

HTS Code

Pin Count

Qualification Status

Contact Plating

Number of Pins

Weight

Pbfree Code

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
BSN20,215

Nexperia USA Inc.

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

TrenchMOS™

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

compliant

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

830mW Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

15 Ω @ 100mA, 10V

1V @ 1mA

25pF @ 10V

173mA Ta

50V

5V 10V

±20V

0.173A

20Ohm

50V

8 pF

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSN20Q-7

Diodes Incorporated

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-

Tape & Reel (TR)

Automotive, AEC-Q101

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

MOSFET (Metal Oxide)

DUAL

GULL WING

-

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

600mW Ta 920mW Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.8 Ω @ 220mA, 10V

1.5V @ 250μA

40pF @ 10V

500mA Ta

50V

4.5V 10V

±20V

0.5A

-

50V

10 pF

ROHS3 Compliant

16 Weeks

Surface Mount

2013

FET General Purpose Powers

260

30

150°C

0.8nC @ 10V

500mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSN20,215 vs BSN20Q-7
BSN254A,126

NXP USA Inc.

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

SILICON

-55°C~150°C TJ

Tape & Box (TB)

-

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

BOTTOM

-

unknown

O-PBCY-T3

1

SINGLE WITH BUILT-IN DIODE

1W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

5 Ω @ 300mA, 10V

2V @ 1mA

120pF @ 25V

310mA Ta

250V

2.4V 10V

±20V

0.3A

7Ohm

250V

15 pF

ROHS3 Compliant

-

-

2002

FET General Purpose Power

NOT SPECIFIED

NOT SPECIFIED

-

-

-

8541.29.00.95

3

Not Qualified

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSN20,215 vs BSN254A,126
BSN20-7

Diodes Incorporated

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

Active

1 (Unlimited)

3

EAR99

-

HIGH RELIABILITY

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

1

-

600mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

1.8 Ω @ 220mA, 10V

1.5V @ 250μA

40pF @ 10V

500mA Ta

-

4.5V 10V

±20V

0.5A

-

-

-

ROHS3 Compliant

16 Weeks

Surface Mount

1997

FET General Purpose Powers

260

40

-

0.8nC @ 10V

500mA

-

3

-

Tin

3

7.994566mg

yes

1

Single

600mW

2.93 ns

2.99ns

8.3 ns

9.45 ns

20V

50V

150°C

1.1mm

3mm

1.4mm

No SVHC

No

Lead Free

BSN20,215 vs BSN20-7