Infineon Technologies BSC320N20NS3 G
- Part Number:
- BSC320N20NS3 G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479861-BSC320N20NS3 G
- Description:
- MOSFET N-CH 200V 36A TDSON-8
- Datasheet:
- BSC320N20NS3 G
Infineon Technologies BSC320N20NS3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC320N20NS3 G.
- Vgs(th) (Max) @ Id:4V @ 90µA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TDSON-8
- Series:OptiMOS™
- Rds On (Max) @ Id, Vgs:32 mOhm @ 36A, 10V
- Power Dissipation (Max):125W (Tc)
- Packaging:Tape & Reel (TR)
- Package / Case:8-PowerTDFN
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:2350pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):10V
- Drain to Source Voltage (Vdss):200V
- Current - Continuous Drain (Id) @ 25°C:36A (Tc)
We can supply International Rectifier (Infineon Technologies) BSC320N20NS3 G, use the request quote form to request BSC320N20NS3 G pirce, International Rectifier (Infineon Technologies) Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSC320N20NS3 G.The price and lead time for BSC320N20NS3 G depending on the quantity required, availability and warehouse location.
BSC320N20NS3 G More Descriptions
Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosdfet n-ch 200v 36a
Mosdfet n-ch 200v 36a
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