Fairchild/ON Semiconductor BD682S

Name: BD682S
Brand: Fairchild/ON Semiconductor
SKU: 2467225-BD682S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD682S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2467225-BD682S

Description:: TRANS PNP DARL 100V 4A TO-126

ECAD Model:

Datasheet:: BD682S

Specifications

Fairchild/ON Semiconductor BD682S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD682S.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
14W
Current Rating
-4A
Base Part Number
BD682
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power - Max
14W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
2.5V
Max Breakdown Voltage
22V
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-5V
hFE Min
750
Continuous Collector Current
-4A
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD682S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 22V volts that it can take.Collector current can be as low as 4A volts at its maximum.

BD682S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD682S Applications
There are a lot of ON Semiconductor
BD682S applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD682S More Descriptions

4.0 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
PNP Epitaxial Silicon Transistor Product Highlights: Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively

Product Comparison

The three parts on the right have similar specifications to BD682S.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Power - Max

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Power Dissipation

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
BD682S

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

761mg

SILICON

150°C TJ

Bulk

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-100V

14W

-4A

BD682

1

PNP

Single

14W

SWITCHING

PNP - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

3MHz

2.5V

22V

-100V

-5V

750

-4A

11mm

8mm

3.25mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD680ASTU

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

20 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

761mg

SILICON

150°C TJ

Tube

2002

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-80V

14W

-4A

BD680

1

PNP

Single

-

SWITCHING

PNP - Darlington

80V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

80V

-

2.8V

-

-80V

-5V

750

-4A

11mm

8mm

3.25mm

No

ROHS3 Compliant

Lead Free

14W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD682S vs BD680ASTU
BD681

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

2.5V @ 30mA, 1.5A

NPN - Darlington

SOT-32-3

-

40W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

BD682S vs BD681
BD682

STMicroelectronics

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Through Hole

Through Hole

TO-225AA, TO-126-3

3

-

-

-55°C~150°C TJ

Bulk

2008

-

-

Obsolete

1 (Unlimited)

-

-

-

-

40W

-

BD682

-

PNP

Single

40W

-

PNP - Darlington

2.5V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

25MHz

-

80V

100V

5V

750

4A

-

-

-

-

Non-RoHS Compliant

Contains Lead

40W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-225AA

150°C

-55°C

100V

4A

BD682S vs BD682