Fairchild/ON Semiconductor BD239C
- Part Number:
- BD239C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845571-BD239C
- Description:
- TRANS NPN 100V 2A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor BD239C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD239C.
- Voltage - Collector Emitter Breakdown (Max):100V
- Vce Saturation (Max) @ Ib, Ic:700mV @ 200mA, 1A
- Transistor Type:NPN
- Supplier Device Package:TO-220
- Series:-
- Power - Max:30W
- Packaging:Bulk
- Package / Case:TO-220-3
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 4V
- Current - Collector Cutoff (Max):300µA
- Current - Collector (Ic) (Max):2A
The BD239C is TRANS NPN 100V 2A TO-220 , it is part of - series. they are designed to work as Transistors - Bipolar (BJT) - Single.BD239C with pin details manufactured by Fairchild/ON Semiconductor. The BD239C is available in TO-220 Package,it is part of the electronic component Chips.that includes - Series. they are designed to operate as Transistors - Bipolar (BJT) - Single.it is with Operating Temperature 150°C (TJ).BD239C with original stock manufactured by Fairchild/ON Semiconductor. The BD239C is available in TO-220 Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of BD239Cis designed to work in TO-220-3, it's Operating Temperature is 150°C (TJ).The BD239C is available in TO-220-3 Package, is part of the Transistors - Bipolar (BJT) - Single and belong to Discrete Semiconductor Products.BD239C with EDA / CAD Models manufactured by Fairchild/ON Semiconductor. The BD239C is available in TO-220Package, is part of the Discrete Semiconductor Products.The BD239C is Transistors - Bipolar (BJT) - Single with package TO-220-3 manufactured by Fairchild/ON Semiconductor. The BD239C is available in TO-220 Package, is part of the TRANS NPN 100V 2A TO-220.
BD239C More Descriptions
Bipolar junction transistor, NPN, 2 A, 115 ## Fehler ##, THT, TO-220, BD239C
BD239C Series 100 V 2 A Surface Mount NPN Power Transistor - TO-220-3
Trans GP BJT NPN 100V 2A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 200mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-
BD239C Series 100 V 2 A Surface Mount NPN Power Transistor - TO-220-3
Trans GP BJT NPN 100V 2A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 200mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-
The three parts on the right have similar specifications to BD239C.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Mounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyRoHS StatusLifecycle StatusFactory Lead TimeNumber of PinsPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyPin CountElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningLead FreeView Compare
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BD239C100V700mV @ 200mA, 1ANPNTO-220-30WBulkTO-220-3150°C (TJ)Through Hole-15 @ 1A, 4V300µA2A-----------------------------------------------------------
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--------------Through HoleTO-225AA, TO-126-3TO-126-3150°C TJTubeObsolete1 (Unlimited)BD23425WPNP25 @ 1A 2V100μA ICBO600mV @ 100mA, 1A45V2A3MHz------------------------------------------
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--------------Through HoleTO-225AA, TO-126-3-150°C TJTubeObsolete1 (Unlimited)-25WNPN25 @ 1A 2V100μA ICBO600mV @ 100mA, 1A45V2A3MHzNOSILICONe3yes3MATTE TINSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLESWITCHINGNPN3MHzROHS3 Compliant------------------------
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--------------Through HoleTO-225AA, TO-126-3--55°C~150°C TJBulkActive1 (Unlimited)BD237-NPN25 @ 1A 2V100μA ICBO600mV @ 100mA, 1A---NOSILICONe3yes3Tin (Sn)-260-40--1-AMPLIFIERNPN3MHzROHS3 CompliantACTIVE (Last Updated: 2 days ago)2 Weeks32003EAR99Other Transistors80V25W2A3MHz3Single25W3MHz80V2A80V600mV100V5V40No SVHCNoLead Free
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