ON Semiconductor BD237G

Name: BD237G
Brand: ON Semiconductor
SKU: 2845848-BD237G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD237G

Manufacturer:: ON Semiconductor

Ventron No:: 2845848-BD237G

Description:: TRANS NPN 80V 2A TO-225

ECAD Model:

Datasheet:: BD237G

Specifications

ON Semiconductor BD237G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD237G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
25W
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
3MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BD237
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
25W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD237G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 2V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 2A volts at its maximum.

BD237G Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz

BD237G Applications
There are a lot of ON Semiconductor
BD237G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD237G More Descriptions

2.0 A, 80 V, 25W NPN Bipolar Power Transistor
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 3 MHz, 25 W, 2 A, 3 RoHS Compliant: Yes
80V 25W 25@1A,2V 2A NPN TO-225 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 2A 25000mW 3-Pin(3 Tab) TO-225 Box
BD Series 80 V 2 A NPN Plastic Medium Power Transistor - TO-225
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 25W; DC Collector Current: 2A; DC Current Gain hFE: 3hFE; Transistor Case Style: T
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers util complementary or quasi complementary circuits.

Product Comparison

The three parts on the right have similar specifications to BD237G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Mount

Case Connection

VCEsat-Max

Height

Length

Width

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Power - Max

JEDEC-95 Code

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
BD237G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

SILICON

-55°C~150°C TJ

Bulk

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

80V

25W

260

2A

3MHz

40

BD237

3

1

Single

25W

AMPLIFIER

3MHz

NPN

NPN

80V

2A

25 @ 1A 2V

100μA ICBO

600mV @ 100mA, 1A

80V

3MHz

600mV

100V

5V

40

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD237

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Through Hole

TO-225AA, TO-126-3

-

3

SILICON

150°C TJ

Tube

-

e3

-

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

100V

25W

-

2A

3MHz

-

BD237

3

1

Single

25W

SWITCHING

3MHz

NPN

NPN

80V

2A

25 @ 1A 2V

100μA ICBO

600mV @ 100mA, 1A

80V

3MHz

600mV

80V

5V

40

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

Through Hole

ISOLATED

0.6 V

10.8mm

7.8mm

2.7mm

-

-

-

-

-

-

-

-

-

BD237G vs BD237
BD239TU

Fairchild/ON Semiconductor

-

-

Through Hole

TO-220-3

NO

-

SILICON

150°C TJ

Tube

-

e3

-

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

-

-

-

NOT APPLICABLE

-

-

NOT APPLICABLE

BD239

-

1

-

-

SWITCHING

-

NPN

NPN

-

-

15 @ 1A 4V

300μA

700mV @ 200mA, 1A

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

SINGLE

compliant

R-PSFM-T3

Not Qualified

SINGLE

30W

TO-220AB

45V

2A

BD237G vs BD239TU
BD239A-S

Bourns Inc.

-

-

Through Hole

TO-220-3

-

3

-

-65°C~150°C TJ

Tube

1993

-

yes

Obsolete

1 (Unlimited)

-

EAR99

-

-

-

30W

-

-

-

-

BD239

3

1

Single

30W

-

-

-

NPN

60V

2A

15 @ 1A 4V

300μA

700mV @ 200mA, 1A

60V

-

-

-

5V

-

-

No

ROHS3 Compliant

-

-

Through Hole

-

-

-

-

-

-

-

-

-

-

2W

-

-

-

BD237G vs BD239A-S