STMicroelectronics BD237

Name: BD237
Brand: STMicroelectronics
SKU: 3068783-BD237
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD237

Manufacturer:: STMicroelectronics

Ventron No:: 3068783-BD237

Description:: TRANS NPN 80V 2A SOT-32

ECAD Model:

Datasheet:: BD23x

Specifications

STMicroelectronics BD237 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD237.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
25W
Current Rating
2A
Frequency
3MHz
Base Part Number
BD237
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
25W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
VCEsat-Max
0.6 V
Height
10.8mm
Length
7.8mm
Width
2.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD237 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

BD237 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz

BD237 Applications
There are a lot of STMicroelectronics
BD237 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD237 More Descriptions

Bipolar (Bjt) Single Transistor, Npn, 80 V, 3 Mhz, 25 W, 2 A, 40 Rohs Compliant: Yes
BD237 Series 80 V 2 A 25 W NPN Low Voltage Power Transistor - SOT-32
Trans GP BJT NPN 80V 2A 25000mW 3-Pin(3 Tab) SOT-32 Tube
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
100¦ÌA 80V 25W 2A 25@1A,2V 600mV@1A,100mA NPN 150¡æ@(Tj) SOT-32 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT NPN General Purpose
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 25W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style:

Product Comparison

The three parts on the right have similar specifications to BD237.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Pbfree Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

JEDEC-95 Code

Published

View Compare
BD237

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

100V

25W

2A

3MHz

BD237

3

1

Single

25W

ISOLATED

SWITCHING

3MHz

NPN

NPN

80V

2A

25 @ 1A 2V

100μA ICBO

600mV @ 100mA, 1A

80V

3MHz

600mV

80V

5V

40

0.6 V

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD238

STMicroelectronics

-

-

-

-

Through Hole

TO-225AA, TO-126-3

-

SILICON

150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

-

-

-

-

-

-

-

-

1

-

-

-

SWITCHING

-

PNP

PNP

-

-

25 @ 1A 2V

100μA ICBO

600mV @ 100mA, 1A

-

3MHz

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

yes

MATTE TIN

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSFM-T3

COMMERCIAL

SINGLE

25W

80V

2A

-

-

BD237 vs BD238
BD239TU

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

-

-

-

-

-

BD239

-

1

-

-

-

SWITCHING

-

NPN

NPN

-

-

15 @ 1A 4V

300μA

700mV @ 200mA, 1A

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

NO

-

MATTE TIN

SINGLE

NOT APPLICABLE

compliant

NOT APPLICABLE

R-PSFM-T3

Not Qualified

SINGLE

30W

45V

2A

TO-220AB

-

BD237 vs BD239TU
BD237G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

-

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

80V

25W

2A

3MHz

BD237

3

1

Single

25W

-

AMPLIFIER

3MHz

NPN

NPN

80V

2A

25 @ 1A 2V

100μA ICBO

600mV @ 100mA, 1A

80V

3MHz

600mV

100V

5V

40

-

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

NO

yes

Tin (Sn)

-

260

-

40

-

-

-

-

-

-

-

2003

BD237 vs BD237G