AUIRGR4045D

Infineon Technologies AUIRGR4045D

Part Number:
AUIRGR4045D
Manufacturer:
Infineon Technologies
Ventron No:
2497070-AUIRGR4045D
Description:
IGBT 600V 12A 77W DPAK
ECAD Model:
Datasheet:
AUIRGR4045D

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Specifications
Infineon Technologies AUIRGR4045D technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRGR4045D.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    77W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    IRGR4045
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Rise Time-Max
    15ns
  • Element Configuration
    Single
  • Power Dissipation
    77W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    12A
  • Reverse Recovery Time
    74 ns
  • JEDEC-95 Code
    TO-252AA
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V
  • Turn On Time
    38 ns
  • Test Condition
    400V, 6A, 47 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A
  • Turn Off Time-Nom (toff)
    127 ns
  • IGBT Type
    Trench
  • Gate Charge
    19.5nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    27ns/75ns
  • Switching Energy
    56μJ (on), 122μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    22ns
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
AUIRGR4045D Description
DIODE OF ULTRAFAST SOFT RECOVERY

AUIRGR4045D Features
? VCE (on) Temperature Coefficient is positive.
? Co-pak Diode with Ultra Fast Soft Recovery
? Tighter Parameter Distribution
? Lead-Free; complies with RoHS

AUIRGR4045D Applications
Switching applications
AUIRGR4045D More Descriptions
600V Low VCEon IGBT with UltraFast Soft Recovery Diode in a D-Pak package, DPAKCOPAK-3, RoHSInfineon SCT
Igbt, Aec-Q101, 600V, 12A, 77W, To-252 Rohs Compliant: Yes
AUIRGR Series 600 V 12 A Surface Mount IGBT - TO-252-3
Benefits: Low Vce(ON); Optimized for motor drive applications; 5us SCSOA at 25C; 175C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump; Piezo Injection; PTC Heater
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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