Infineon Technologies AUIRG4BC30U-S

Name: AUIRG4BC30U-S
Brand: Infineon Technologies
SKU: 2494872-AUIRG4BC30U-S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRG4BC30U-S

Manufacturer:: Infineon Technologies

Ventron No:: 2494872-AUIRG4BC30U-S

Description:: IGBT 600V 23A 100W D2PAK

ECAD Model:

Datasheet:: AUIRG4BC30U-S(L)

Specifications

Infineon Technologies AUIRG4BC30U-S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRG4BC30U-S.

Factory Lead Time
9 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Packaging
Tube
Published
2010
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
100W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
23A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
33 ns
Test Condition
480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Turn Off Time-Nom (toff)
320 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
17ns/78ns
Switching Energy
360μJ
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
150ns
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

AUIRG4BC30U-S Description
AUIRG4BC30U-S is a 600v ultrafast speed insulated gate bipolar transistor. The Infineon AUIRG4BC30U-S can be applied in SMPS and PFC applications due to the following features. And the main parameter of this part is Trans IGBT Chip N-CH 600V 23A 3-Pin(2 Tab) D2PAK - Bulk (Alt: AUIRG4BC30U-S). The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor AUIRG4BC30U-S is in the D2Pak package with 100W power dissipation.

AUIRG4BC30U-S Features
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Industry-standard D2Pak & TO-262 package Lead-Free, RoHS Compliant Automotive Qualified

AUIRG4BC30U-S Applications
SMPS PFC Industrial Test & Measurement Enterprise systems Enterprise machine Personal electronics Tablets

AUIRG4BC30U-S More Descriptions

600V Automotive UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans IGBT Chip N-CH 600V 23A 3-Pin(2 Tab) D2PAK - Rail/Tube
Benefits: Low Vce(on); Optimized for <1KHz switching applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump
IGBT, 600V, 23A, 100W, D2PAK; Transistor Type:IGBT; DC Collector Current:23A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-262; No. of Pins:3; Power Dissipation Pd:100W

Certification