Infineon Technologies AUIRG4BC30S-S

Name: AUIRG4BC30S-S
Brand: Infineon Technologies
SKU: 2497075-AUIRG4BC30S-S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRG4BC30S-S

Manufacturer:: Infineon Technologies

Ventron No:: 2497075-AUIRG4BC30S-S

Description:: IGBT 600V 34A 100W D2PAK

ECAD Model:

Datasheet:: AUIRG4BC30S-S(L)

Specifications

Infineon Technologies AUIRG4BC30S-S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRG4BC30S-S.

Factory Lead Time
9 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2010
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
100W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
34A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Turn On Time
40 ns
Test Condition
480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 18A
Turn Off Time-Nom (toff)
1550 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
68A
Td (on/off) @ 25°C
22ns/540ns
Switching Energy
260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
590ns
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

AUIRG4BC30S-S Description AUIRG4BC30S-S transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AUIRG4BC30S-S MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies AUIRG4BC30S-S has the common source configuration. AUIRG4BC30S-S Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging AUIRG4BC30S-S Applications ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display

AUIRG4BC30S-S More Descriptions

600V Automotive DC-1 kHz Discrete IGBT in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans IGBT Chip N-CH 600V 34A 3-Pin(2 Tab) D2PAK Tube
Benefits: Low Vce(on); Optimized for <1KHz switching applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant
IGBT, 600V, 34A, 100W, D2PAK; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-262; No. of Pins:3; Power Dissipation Pd:100W

Certification