Infineon Technologies AUIRFS3004-7P

Name: AUIRFS3004-7P
Brand: Infineon Technologies
SKU: 3813791-AUIRFS3004-7P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRFS3004-7P

Manufacturer:: Infineon Technologies

Ventron No:: 3813791-AUIRFS3004-7P

Description:: MOSFET N-CH 40V 240A D2PAK-7P

ECAD Model:

Datasheet:: AUIRFS3004-7P

Specifications

Infineon Technologies AUIRFS3004-7P technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFS3004-7P.

Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads Tab)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2015
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G6
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
380W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.25m Ω @ 195A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9130pF @ 25V
Current - Continuous Drain (Id) @ 25°C
240A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-263CB
Drain Current-Max (Abs) (ID)
240A
Drain-source On Resistance-Max
0.00125Ohm
Pulsed Drain Current-Max (IDM)
1610A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
290 mJ
RoHS Status
ROHS3 Compliant

Description

AUIRFS3004-7P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 9130pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 240A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 1610A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

AUIRFS3004-7P Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 1610A.
a 40V drain to source voltage (Vdss)

AUIRFS3004-7P Applications
There are a lot of Infineon Technologies
AUIRFS3004-7P applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

AUIRFS3004-7P More Descriptions

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHSInfineon SCT
Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive

Product Comparison

The three parts on the right have similar specifications to AUIRFS3004-7P.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Contact Plating

Mount

Number of Pins

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Nominal Vgs

View Compare
AUIRFS3004-7P

Infineon Technologies

16 Weeks

Surface Mount

TO-263-7, D2Pak (6 Leads Tab)

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2015

e3

Discontinued

1 (Unlimited)

6

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G6

1

SINGLE WITH BUILT-IN DIODE

380W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.25m Ω @ 195A, 10V

4V @ 250μA

9130pF @ 25V

240A Tc

240nC @ 10V

40V

10V

±20V

TO-263CB

240A

0.00125Ohm

1610A

40V

290 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
AUIRF1405ZS

Infineon Technologies

16 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2006

e3

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

-

1

-

230W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

150A Tc

180nC @ 10V

-

10V

±20V

-

-

0.0049Ohm

600A

-

-

ROHS3 Compliant

Tin

Surface Mount

2

Single

230W

18 ns

110ns

82 ns

48 ns

150A

2V

20V

55V

4.826mm

10.668mm

9.65mm

No SVHC

No

-

AUIRFS3004-7P vs AUIRF1405ZS
AUIRF3315S

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

2010

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

3.8W Ta 94W Tc

-

-

N-Channel

-

82m Ω @ 12A, 10V

4V @ 250μA

1300pF @ 25V

21A Tc

95nC @ 10V

-

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

3

Single

3.8W

9.6 ns

32ns

38 ns

49 ns

21A

2V

20V

150V

4.83mm

10.67mm

9.65mm

No SVHC

No

-

AUIRFS3004-7P vs AUIRF3315S
AUIRF540ZS

Infineon Technologies

13 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2010

e3

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

1

-

92W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

26.5m Ω @ 22A, 10V

4V @ 250μA

1770pF @ 25V

36A Tc

63nC @ 10V

-

10V

±20V

-

-

0.0265Ohm

-

-

-

ROHS3 Compliant

Tin

Surface Mount

3

Single

92W

15 ns

51ns

39 ns

43 ns

36A

2V

20V

100V

4.83mm

10.67mm

9.65mm

No SVHC

No

2 V

AUIRFS3004-7P vs AUIRF540ZS