Infineon Technologies AUIRF1405ZSTRL

Name: AUIRF1405ZSTRL
Brand: Infineon Technologies
SKU: 3586554-AUIRF1405ZSTRL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRF1405ZSTRL

Manufacturer:: Infineon Technologies

Ventron No:: 3586554-AUIRF1405ZSTRL

Description:: MOSFET N-CH 55V 150A D2PAK

ECAD Model:

Datasheet:: AUIRF1405ZSTRL

Specifications

Infineon Technologies AUIRF1405ZSTRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRF1405ZSTRL.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.9m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
82 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
150A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0049Ohm
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
600A
Avalanche Energy Rating (Eas)
270 mJ
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

AUIRF1405ZSTRL Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 270 mJ.A device's maximal input capacitance is 4780pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 150A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 48 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

AUIRF1405ZSTRL Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.

AUIRF1405ZSTRL Applications
There are a lot of Infineon Technologies
AUIRF1405ZSTRL applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

AUIRF1405ZSTRL More Descriptions

Trans MOSFET N-CH 55V 150A Automotive 3-Pin(2 Tab) D2PAK T/R
Single N-Channel 55 V 4.9 mOhm 180 nC Automotive HEXFET® Power Mosfet - TO-263-3
Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Product Comparison

The three parts on the right have similar specifications to AUIRF1405ZSTRL.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Contact Plating

Threshold Voltage

REACH SVHC

Nominal Vgs

Surface Mount

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

View Compare
AUIRF1405ZSTRL

Infineon Technologies

16 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2013

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

18 ns

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

150A Tc

180nC @ 10V

110ns

10V

±20V

82 ns

48 ns

150A

20V

0.0049Ohm

55V

600A

270 mJ

4.826mm

10.668mm

9.65mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
AUIRF1324S

Infineon Technologies

39 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2010

e3

Discontinued

1 (Unlimited)

2

EAR99

-

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

-

17 ns

N-Channel

SWITCHING

1.65m Ω @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

10V

±20V

120 ns

83 ns

195A

20V

-

24V

-

270 mJ

4.83mm

10.67mm

9.65mm

No

ROHS3 Compliant

Tin

2V

No SVHC

-

-

-

-

-

AUIRF1405ZSTRL vs AUIRF1324S
AUIRF540ZS

Infineon Technologies

13 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2010

e3

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

92W Tc

Single

ENHANCEMENT MODE

92W

DRAIN

15 ns

N-Channel

SWITCHING

26.5m Ω @ 22A, 10V

4V @ 250μA

1770pF @ 25V

36A Tc

63nC @ 10V

51ns

10V

±20V

39 ns

43 ns

36A

20V

0.0265Ohm

100V

-

-

4.83mm

10.67mm

9.65mm

No

ROHS3 Compliant

Tin

2V

No SVHC

2 V

-

-

-

-

AUIRF1405ZSTRL vs AUIRF540ZS
AUIRF3315STRL

Infineon Technologies

9 Weeks

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2010

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

3.8W Ta 94W Tc

-

-

-

-

-

N-Channel

-

82m Ω @ 12A, 10V

4V @ 250μA

1300pF @ 25V

21A Tc

95nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

YES

Single

150V

21A

AUIRF1405ZSTRL vs AUIRF3315STRL