APT80GA60B

Microsemi Corporation APT80GA60B

Part Number:
APT80GA60B
Manufacturer:
Microsemi Corporation
Ventron No:
3587293-APT80GA60B
Description:
IGBT 600V 143A 625W TO247
ECAD Model:
Datasheet:
APT80GA60B

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Specifications
Microsemi Corporation APT80GA60B technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT80GA60B.
  • Factory Lead Time
    33 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    PURE MATTE TIN
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    625W
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    143A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V
  • Turn On Time
    52 ns
  • Test Condition
    400V, 47A, 4.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 47A
  • Continuous Collector Current
    143A
  • Turn Off Time-Nom (toff)
    326 ns
  • IGBT Type
    PT
  • Gate Charge
    230nC
  • Current - Collector Pulsed (Icm)
    240A
  • Td (on/off) @ 25°C
    23ns/158ns
  • Switching Energy
    840μJ (on), 751μJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Height
    21.46mm
  • Length
    16.26mm
  • Width
    5.31mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
APT80GA60B Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT80GA60B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT80GA60B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT80GA60B More Descriptions
Igbt Pt Mos 8 Single 600 V 80 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT80GA60B
Trans IGBT Chip N-CH 600V 143A 3-Pin(3 Tab) TO-247
Insulated Gate Bipolar Transistor - Power MOS 8
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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