Microsemi Corporation APT80GA60B
- Part Number:
- APT80GA60B
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3587293-APT80GA60B
- Description:
- IGBT 600V 143A 625W TO247
- Datasheet:
- APT80GA60B
Microsemi Corporation APT80GA60B technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT80GA60B.
- Factory Lead Time33 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishPURE MATTE TIN
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation625W
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current143A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
- Turn On Time52 ns
- Test Condition400V, 47A, 4.7 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 47A
- Continuous Collector Current143A
- Turn Off Time-Nom (toff)326 ns
- IGBT TypePT
- Gate Charge230nC
- Current - Collector Pulsed (Icm)240A
- Td (on/off) @ 25°C23ns/158ns
- Switching Energy840μJ (on), 751μJ (off)
- Gate-Emitter Voltage-Max30V
- Gate-Emitter Thr Voltage-Max6V
- Height21.46mm
- Length16.26mm
- Width5.31mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
APT80GA60B Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT80GA60B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT80GA60B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT80GA60B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT80GA60B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT80GA60B More Descriptions
Igbt Pt Mos 8 Single 600 V 80 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT80GA60B
Trans IGBT Chip N-CH 600V 143A 3-Pin(3 Tab) TO-247
Insulated Gate Bipolar Transistor - Power MOS 8
Trans IGBT Chip N-CH 600V 143A 3-Pin(3 Tab) TO-247
Insulated Gate Bipolar Transistor - Power MOS 8
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