Microsemi Corporation APT70GR120L

Name: APT70GR120L
Brand: Microsemi Corporation
SKU: 2854591-APT70GR120L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT70GR120L

Manufacturer:: Microsemi Corporation

Ventron No:: 2854591-APT70GR120L

Description:: IGBT 1200V 160A 961W TO264

ECAD Model:

Datasheet:: APT70GR120L

Specifications

Microsemi Corporation APT70GR120L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT70GR120L.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2001
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
961W
Element Configuration
Single
Input Type
Standard
Power - Max
961W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3.2V
Max Collector Current
160A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 70A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 70A
IGBT Type
NPT
Gate Charge
544nC
Current - Collector Pulsed (Icm)
280A
Td (on/off) @ 25°C
33ns/278ns
Switching Energy
3.82mJ (on), 2.58mJ (off)
Gate-Emitter Voltage-Max
30V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

APT70GR120L Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT70GR120L or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT70GR120L. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APT70GR120L More Descriptions

Trans IGBT Chip N-CH 1200V 160A 961000mW 3-Pin(3 Tab) TO-264 Tube
APT70GR120 Series 1200 V 70 A 544nC 961 W NPT IGBT - TO-264-3
Ultra Fast NPT IGBT N-Channel 1200V 160A 3-Pin TO-264
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel

Product Comparison

The three parts on the right have similar specifications to APT70GR120L.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Element Configuration

Input Type

Power - Max

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Lead Free

Supplier Device Package

Current - Collector (Ic) (Max)

ECCN Code

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Additional Feature

Voltage - Rated DC

Current Rating

Pin Count

JESD-30 Code

Number of Elements

Case Connection

Turn On Delay Time

Transistor Application

Turn-Off Delay Time

Collector Emitter Saturation Voltage

Turn On Time

Continuous Collector Current

Turn Off Time-Nom (toff)

Height

Length

Width

Radiation Hardening

View Compare
APT70GR120L

Microsemi Corporation

18 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

-55°C~150°C TJ

Tube

2001

Active

1 (Unlimited)

Insulated Gate BIP Transistors

961W

Single

Standard

961W

N-CHANNEL

3.2V

160A

1.2kV

1200V

600V, 70A, 4.3 Ω, 15V

3.2V @ 15V, 70A

NPT

544nC

280A

33ns/278ns

3.82mJ (on), 2.58mJ (off)

30V

6.5V

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APT70GR120B2

Microsemi Corporation

18 Weeks

-

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

2001

Active

1 (Unlimited)

-

-

-

Standard

961W

-

-

-

-

1200V

600V, 70A, 4.3Ohm, 15V

3.2V @ 15V, 70A

NPT

544nC

280A

33ns/278ns

3.82mJ (on), 2.58mJ (off)

-

-

RoHS Compliant

-

TO-247

160A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

APT70GR120L vs APT70GR120B2
APT70GR65B2DU40

Microsemi Corporation

22 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Bulk

2001

Active

1 (Unlimited)

-

595W

-

Standard

595W

-

2.4V

134A

650V

-

433V, 70A, 4.3 Ω, 15V

2.4V @ 15V, 70A

NPT

305nC

280A

18ns/170ns

-

-

-

RoHS Compliant

-

-

-

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

APT70GR120L vs APT70GR65B2DU40
APT75GN120LG

Microsemi Corporation

24 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

-55°C~150°C TJ

Tube

1999

Active

1 (Unlimited)

Insulated Gate BIP Transistors

833W

Single

Standard

-

N-CHANNEL

1.2kV

200A

1.2kV

1200V

800V, 75A, 1 Ω, 15V

2.1V @ 15V, 75A

Trench Field Stop

425nC

225A

60ns/620ns

8620μJ (on), 11400μJ (off)

30V

6.5V

RoHS Compliant

Lead Free

-

-

EAR99

10.6g

SILICON

e1

yes

3

Tin/Silver/Copper (Sn/Ag/Cu)

HIGH RELIABILITY

1.2kV

200A

3

R-PSFM-T3

1

COLLECTOR

60 ns

POWER CONTROL

620 ns

1.7V

101 ns

200A

925 ns

5.21mm

26.49mm

20.5mm

No

APT70GR120L vs APT75GN120LG