Microsemi Corporation APT30GT60BRG
- Part Number:
- APT30GT60BRG
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2496600-APT30GT60BRG
- Description:
- IGBT 600V 64A 250W TO247
- Datasheet:
- APT30GT60BRG
Microsemi Corporation APT30GT60BRG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT30GT60BRG.
- Factory Lead Time24 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesThunderbolt IGBT®
- Published1999
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation250W
- Current Rating64A
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current64A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
- Turn On Time32 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
- Continuous Collector Current64A
- Turn Off Time-Nom (toff)345 ns
- IGBT TypeNPT
- Gate Charge145nC
- Current - Collector Pulsed (Icm)110A
- Td (on/off) @ 25°C12ns/225ns
- Switching Energy525μJ (on), 600μJ (off)
- Gate-Emitter Voltage-Max30V
- Gate-Emitter Thr Voltage-Max5V
- Height5.31mm
- Length21.46mm
- Width16.26mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT30GT60BRG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT30GT60BRG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT30GT60BRG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT30GT60BRG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT30GT60BRG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT30GT60BRG More Descriptions
Trans IGBT Chip N-CH 600V 64A 3-Pin(3 Tab) TO-247
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
Insulated Gate Bipolar Transistor - NPT Standard Speed
French Electronic Distributor since 1988
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
Insulated Gate Bipolar Transistor - NPT Standard Speed
French Electronic Distributor since 1988
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