APT30GT60BRG

Microsemi Corporation APT30GT60BRG

Part Number:
APT30GT60BRG
Manufacturer:
Microsemi Corporation
Ventron No:
2496600-APT30GT60BRG
Description:
IGBT 600V 64A 250W TO247
ECAD Model:
Datasheet:
APT30GT60BRG

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Specifications
Microsemi Corporation APT30GT60BRG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT30GT60BRG.
  • Factory Lead Time
    24 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    Thunderbolt IGBT®
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    250W
  • Current Rating
    64A
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    64A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V
  • Turn On Time
    32 ns
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 30A
  • Continuous Collector Current
    64A
  • Turn Off Time-Nom (toff)
    345 ns
  • IGBT Type
    NPT
  • Gate Charge
    145nC
  • Current - Collector Pulsed (Icm)
    110A
  • Td (on/off) @ 25°C
    12ns/225ns
  • Switching Energy
    525μJ (on), 600μJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Height
    5.31mm
  • Length
    21.46mm
  • Width
    16.26mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT30GT60BRG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT30GT60BRG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT30GT60BRG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT30GT60BRG More Descriptions
Trans IGBT Chip N-CH 600V 64A 3-Pin(3 Tab) TO-247
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
Insulated Gate Bipolar Transistor - NPT Standard Speed
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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