Microsemi Corporation APT29F100B2

Name: APT29F100B2
Brand: Microsemi Corporation
SKU: 2485030-APT29F100B2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT29F100B2

Manufacturer:: Microsemi Corporation

Ventron No:: 2485030-APT29F100B2

Description:: MOSFET N-CH 1000V 30A T-MAX

ECAD Model:

Datasheet:: APT29F100B2

Specifications

Microsemi Corporation APT29F100B2 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT29F100B2.

Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
POWER MOS 8™
Published
1997
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Current Rating
29A
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1040W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.04kW
Case Connection
DRAIN
Turn On Delay Time
39 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
440m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds
8500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
260nC @ 10V
Rise Time
35ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
30A
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.44Ohm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

APT29F100B2 Overview
The maximum input capacitance of this device is 8500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 130 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 39 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

APT29F100B2 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 130 ns
a 1000V drain to source voltage (Vdss)

APT29F100B2 Applications
There are a lot of Microsemi Corporation
APT29F100B2 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

APT29F100B2 More Descriptions

Fredfet Mos8 1000 V 29 A To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT29F100B2
Trans MOSFET N-CH Si 1KV 30A 3-Pin(3 Tab) T-MAX Tube
Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to APT29F100B2.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Current Rating

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Rds On Max

Lifecycle Status

ECCN Code

JESD-30 Code

Pulsed Drain Current-Max (IDM)

View Compare
APT29F100B2

Microsemi Corporation

22 Weeks

Through Hole

Through Hole

TO-247-3 Variant

3

SILICON

-55°C~150°C TJ

Tube

POWER MOS 8™

1997

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

AVALANCHE RATED, HIGH RELIABILITY

1kV

MOSFET (Metal Oxide)

SINGLE

29A

3

1

SINGLE WITH BUILT-IN DIODE

1040W Tc

ENHANCEMENT MODE

1.04kW

DRAIN

39 ns

N-Channel

SWITCHING

440m Ω @ 16A, 10V

5V @ 2.5mA

8500pF @ 25V

30A Tc

260nC @ 10V

35ns

1000V

10V

±30V

33 ns

130 ns

30A

30V

0.44Ohm

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
APT20N60SC3G

Microsemi Corporation

-

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-

-

-55°C~150°C TJ

Tube

CoolMOS™

2004

-

yes

Obsolete

1 (Unlimited)

-

-

-

600V

MOSFET (Metal Oxide)

-

20.7A

3

-

-

208W Tc

-

-

-

-

N-Channel

-

190m Ω @ 13.1A, 10V

3.9V @ 1mA

2440pF @ 25V

20.7A Tc

114nC @ 10V

-

-

10V

±20V

-

-

20.7A

-

-

-

RoHS Compliant

Lead Free

unknown

-

-

-

-

-

-

-

-

APT29F100B2 vs APT20N60SC3G
APT25SM120B

Microsemi Corporation

-

Through Hole

Through Hole

TO-247-3

-

-

-55°C~175°C TJ

Bulk

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

SiCFET (Silicon Carbide)

-

-

-

-

-

175W Tc

-

-

-

-

N-Channel

-

175mOhm @ 10A, 20V

2.5V @ 1mA

-

25A Tc

72nC @ 20V

-

1200V

20V

25V, -10V

-

-

25A

-

-

-

RoHS Compliant

-

-

TO-247

175°C

-55°C

175 mΩ

-

-

-

-

APT29F100B2 vs APT25SM120B
APT20M38BVRG

Microsemi Corporation

31 Weeks

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

POWER MOS V®

1997

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

HIGH VOLTAGE

200V

MOSFET (Metal Oxide)

SINGLE

67A

-

1

SINGLE WITH BUILT-IN DIODE

370W Tc

ENHANCEMENT MODE

370W

DRAIN

14 ns

N-Channel

SWITCHING

38m Ω @ 500mA, 10V

4V @ 1mA

6120pF @ 25V

67A Tc

225nC @ 10V

21ns

-

10V

±30V

10 ns

48 ns

67A

30V

0.038Ohm

No

RoHS Compliant

Lead Free

-

-

-

-

-

IN PRODUCTION (Last Updated: 1 month ago)

EAR99

R-PSFM-T3

268A

APT29F100B2 vs APT20M38BVRG