Microsemi Corporation APT20M38SVRG/TR

Name: APT20M38SVRG/TR
Brand: Microsemi Corporation
SKU: 2851117-APT20M38SVRG/TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT20M38SVRG/TR

Manufacturer:: Microsemi Corporation

Ventron No:: 2851117-APT20M38SVRG/TR

Description:: MOSFET N-CH 200V 67A D3PAK

ECAD Model:

Datasheet:: APT20M38SVRG/TR

Specifications

Microsemi Corporation APT20M38SVRG/TR technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT20M38SVRG/TR.

Factory Lead Time
33 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Supplier Device Package
D3Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
POWER MOS V®
Published
1999
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
370W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
38mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
6120pF @ 25V
Current - Continuous Drain (Id) @ 25°C
67A Tc
Gate Charge (Qg) (Max) @ Vgs
225nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
67A
Input Capacitance
6.12nF
Rds On Max
38 mΩ
RoHS Status
RoHS Compliant

Description

APT20M38SVRG/TR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6120pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

APT20M38SVRG/TR Features
a continuous drain current (ID) of 67A
a 200V drain to source voltage (Vdss)

APT20M38SVRG/TR Applications
There are a lot of Microsemi Corporation
APT20M38SVRG/TR applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

APT20M38SVRG/TR More Descriptions

FG, MOSFET, 200V, 0.038_OHM, D3, TO-268, RoHS, TAPE & REEL
APT20M Series Single N-Channel 200 V 0.038 Ohm 225 nC Silicon Mosfet - D3PAK
Trans MOSFET N-CH 200V 67A 3-Pin D3PAK T/R
Compliant Surface Mount Tape & Reel (TR) 38 mΩ TO-263-3 6.12 nF 370 W 150 °C
Mosfet Mos5 200 V 38 Mohm To-268 Tape & Reel 2 To-268 Tape&reel Rohs Compliant: Yes |Microchip APT20M38SVRG/TR
Power Field-Effect Transistor, 67A I(D), 200V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to APT20M38SVRG/TR.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

RoHS Status

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Position

Current Rating

Pin Count

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Lead Free

Lifecycle Status

View Compare
APT20M38SVRG/TR

Microsemi Corporation

33 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

D3Pak

-55°C~150°C TJ

Tape & Reel (TR)

POWER MOS V®

1999

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

370W Tc

N-Channel

38mOhm @ 33.5A, 10V

4V @ 1mA

6120pF @ 25V

67A Tc

225nC @ 10V

200V

10V

±30V

67A

6.12nF

38 mΩ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APT20M38BVFRG

Microsemi Corporation

-

Through Hole

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

POWER MOS V®

1997

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

370W Tc

N-Channel

38m Ω @ 500mA, 10V

4V @ 1mA

6120pF @ 25V

67A Tc

225nC @ 10V

-

10V

±30V

67A

-

-

RoHS Compliant

SILICON

e1

yes

3

EAR99

TIN SILVER COPPER

AVALANCHE ENERGY RATED

FET General Purpose Power

200V

SINGLE

67A

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

370W

DRAIN

14 ns

SWITCHING

21ns

10 ns

18 ns

TO-247AD

30V

0.038Ohm

268A

No

Lead Free

-

APT20M38SVRG/TR vs APT20M38BVFRG
APT25SM120B

Microsemi Corporation

-

Through Hole

Through Hole

TO-247-3

TO-247

-55°C~175°C TJ

Bulk

-

-

Obsolete

1 (Unlimited)

175°C

-55°C

SiCFET (Silicon Carbide)

175W Tc

N-Channel

175mOhm @ 10A, 20V

2.5V @ 1mA

-

25A Tc

72nC @ 20V

1200V

20V

25V, -10V

25A

-

175 mΩ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

APT20M38SVRG/TR vs APT25SM120B
APT20M38BVRG

Microsemi Corporation

31 Weeks

Through Hole

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

POWER MOS V®

1997

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

370W Tc

N-Channel

38m Ω @ 500mA, 10V

4V @ 1mA

6120pF @ 25V

67A Tc

225nC @ 10V

-

10V

±30V

67A

-

-

RoHS Compliant

SILICON

e1

yes

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

HIGH VOLTAGE

-

200V

SINGLE

67A

-

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

370W

DRAIN

14 ns

SWITCHING

21ns

10 ns

48 ns

-

30V

0.038Ohm

268A

No

Lead Free

IN PRODUCTION (Last Updated: 1 month ago)

APT20M38SVRG/TR vs APT20M38BVRG