APT11GF120KRG

Microsemi Corporation APT11GF120KRG

Part Number:
APT11GF120KRG
Manufacturer:
Microsemi Corporation
Ventron No:
2495086-APT11GF120KRG
Description:
IGBT 1200V 25A 156W TO220
ECAD Model:
Datasheet:
APT11GF120KRG

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation APT11GF120KRG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT11GF120KRG.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    PURE MATTE TIN
  • Additional Feature
    FAST SWITCHING
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    156W
  • Current Rating
    25A
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    25A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    12 ns
  • Test Condition
    800V, 8A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 8A
  • Turn Off Time-Nom (toff)
    161 ns
  • IGBT Type
    NPT
  • Gate Charge
    65nC
  • Current - Collector Pulsed (Icm)
    44A
  • Td (on/off) @ 25°C
    7ns/100ns
  • Switching Energy
    300μJ (on), 285μJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT11GF120KRG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT11GF120KRG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT11GF120KRG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT11GF120KRG More Descriptions
Trans IGBT Chip N-CH 1.2KV 25A 3-Pin(3 Tab) TO-220
IGBT 1200V 25A 156W TO220
Insulated Gate Bipolar Transistor-NPT Medium Speed
Contact for details
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.