Alpha & Omega Semiconductor Inc. AOWF20S60
- Part Number:
- AOWF20S60
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 3070950-AOWF20S60
- Description:
- MOSFET N-CH 600V 20A TO262F
- Datasheet:
- AOWF20S60
Alpha & Omega Semiconductor Inc. AOWF20S60 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOWF20S60.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Full Pack, I2Pak
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesaMOS™
- Published2009
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max28W Tc
- Power Dissipation28W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs199mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id4.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1038pF @ 100V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs19.8nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)20A
- Input Capacitance1.038nF
- Rds On Max199 mΩ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
AOWF20S60 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1038pF @ 100V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AOWF20S60 Features
a continuous drain current (ID) of 20A
a 600V drain to source voltage (Vdss)
AOWF20S60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOWF20S60 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1038pF @ 100V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AOWF20S60 Features
a continuous drain current (ID) of 20A
a 600V drain to source voltage (Vdss)
AOWF20S60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOWF20S60 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AOWF20S60 More Descriptions
Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-262F
Controller 4.5V to 5.5V Automotive 16-Pin WQFN EP T/R
600V N-Channel MOSFET, TO-262F-3, RoHSAlpha & Omega Semiconductor SCT
Controller 4.5V to 5.5V Automotive 16-Pin WQFN EP T/R
600V N-Channel MOSFET, TO-262F-3, RoHSAlpha & Omega Semiconductor SCT
The three parts on the right have similar specifications to AOWF20S60.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRadiation HardeningRoHS StatusSubcategoryConfigurationOperating ModeView Compare
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AOWF20S6016 WeeksThrough HoleThrough HoleTO-262-3 Full Pack, I2Pak3-55°C~150°C TJTubeaMOS™2009Not For New Designs1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)128W Tc28WN-Channel199mOhm @ 10A, 10V4.1V @ 250μA1038pF @ 100V20A Tc19.8nC @ 10V600V10V±30V20A1.038nF199 mΩNoROHS3 Compliant----
-
18 WeeksThrough HoleThrough HoleTO-262-3 Full Pack, I2Pak--55°C~150°C TJTube-2009Active1 (Unlimited)--MOSFET (Metal Oxide)-28W Tc-N-Channel380m Ω @ 7A, 10V4.5V @ 250μA2297pF @ 25V14A Tc51nC @ 10V500V10V±30V14A---ROHS3 CompliantFET General Purpose PowerSingleENHANCEMENT MODE
-
18 WeeksThrough HoleThrough HoleTO-262-3 Full Pack, I2Pak--55°C~150°C TJTube-2009Active1 (Unlimited)--MOSFET (Metal Oxide)-25W Tc-N-Channel1 Ω @ 5A, 10V4.5V @ 250μA1645pF @ 25V10A Tc33nC @ 10V650V10V±30V10A---ROHS3 Compliant---
-
18 WeeksThrough HoleThrough HoleTO-262-3 Full Pack, I2Pak--55°C~150°C TJTube-2009Active1 (Unlimited)--MOSFET (Metal Oxide)-27.8W Tc-N-Channel650m Ω @ 5.5A, 10V4.5V @ 250μA1990pF @ 25V11A Tc37nC @ 10V600V10V±30V11A---ROHS3 Compliant---
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