AOWF20S60

Alpha & Omega Semiconductor Inc. AOWF20S60

Part Number:
AOWF20S60
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
3070950-AOWF20S60
Description:
MOSFET N-CH 600V 20A TO262F
ECAD Model:
Datasheet:
AOWF20S60

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Specifications
Alpha & Omega Semiconductor Inc. AOWF20S60 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOWF20S60.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Full Pack, I2Pak
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    aMOS™
  • Published
    2009
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    28W Tc
  • Power Dissipation
    28W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    199mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1038pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19.8nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Continuous Drain Current (ID)
    20A
  • Input Capacitance
    1.038nF
  • Rds On Max
    199 mΩ
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
AOWF20S60 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1038pF @ 100V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

AOWF20S60 Features
a continuous drain current (ID) of 20A
a 600V drain to source voltage (Vdss)


AOWF20S60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOWF20S60 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AOWF20S60 More Descriptions
Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-262F
Controller 4.5V to 5.5V Automotive 16-Pin WQFN EP T/R
600V N-Channel MOSFET, TO-262F-3, RoHSAlpha & Omega Semiconductor SCT
Product Comparison
The three parts on the right have similar specifications to AOWF20S60.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    Radiation Hardening
    RoHS Status
    Subcategory
    Configuration
    Operating Mode
    View Compare
  • AOWF20S60
    AOWF20S60
    16 Weeks
    Through Hole
    Through Hole
    TO-262-3 Full Pack, I2Pak
    3
    -55°C~150°C TJ
    Tube
    aMOS™
    2009
    Not For New Designs
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    28W Tc
    28W
    N-Channel
    199mOhm @ 10A, 10V
    4.1V @ 250μA
    1038pF @ 100V
    20A Tc
    19.8nC @ 10V
    600V
    10V
    ±30V
    20A
    1.038nF
    199 mΩ
    No
    ROHS3 Compliant
    -
    -
    -
    -
  • AOWF14N50
    18 Weeks
    Through Hole
    Through Hole
    TO-262-3 Full Pack, I2Pak
    -
    -55°C~150°C TJ
    Tube
    -
    2009
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    28W Tc
    -
    N-Channel
    380m Ω @ 7A, 10V
    4.5V @ 250μA
    2297pF @ 25V
    14A Tc
    51nC @ 10V
    500V
    10V
    ±30V
    14A
    -
    -
    -
    ROHS3 Compliant
    FET General Purpose Power
    Single
    ENHANCEMENT MODE
  • AOWF10N65
    18 Weeks
    Through Hole
    Through Hole
    TO-262-3 Full Pack, I2Pak
    -
    -55°C~150°C TJ
    Tube
    -
    2009
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    25W Tc
    -
    N-Channel
    1 Ω @ 5A, 10V
    4.5V @ 250μA
    1645pF @ 25V
    10A Tc
    33nC @ 10V
    650V
    10V
    ±30V
    10A
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
  • AOWF11N60
    18 Weeks
    Through Hole
    Through Hole
    TO-262-3 Full Pack, I2Pak
    -
    -55°C~150°C TJ
    Tube
    -
    2009
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    27.8W Tc
    -
    N-Channel
    650m Ω @ 5.5A, 10V
    4.5V @ 250μA
    1990pF @ 25V
    11A Tc
    37nC @ 10V
    600V
    10V
    ±30V
    11A
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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