Alpha & Omega Semiconductor Inc. AON7400A
- Part Number:
- AON7400A
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2481863-AON7400A
- Description:
- MOSFET N-CH 30V 15A 8DFN
- Datasheet:
- AON7400A
Alpha & Omega Semiconductor Inc. AON7400A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AON7400A.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeS-PDSO-F5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.1W Ta 25W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation25W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1380pF @ 15V
- Current - Continuous Drain (Id) @ 25°C15A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)40A
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)36 mJ
- RoHS StatusROHS3 Compliant
AON7400A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 36 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1380pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
AON7400A Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 40A
a 30V drain to source voltage (Vdss)
AON7400A Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AON7400A applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 36 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1380pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
AON7400A Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 40A
a 30V drain to source voltage (Vdss)
AON7400A Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AON7400A applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
AON7400A More Descriptions
Trans MOSFET N-CH 30V 40A 8-Pin DFN-A EP
30V N-Channel MOSFET, DFN3x3A-8L_EP, RoHSAlpha & Omega Semiconductor SCT
30V 15A 3.1W 7.5mΩ@10V,20A N Channel DFN-8(3x3) MOSFETs ROHS
IC REG LINEAR 1.8V 1A SOT223-6
30V N-Channel MOSFET, DFN3x3A-8L_EP, RoHSAlpha & Omega Semiconductor SCT
30V 15A 3.1W 7.5mΩ@10V,20A N Channel DFN-8(3x3) MOSFETs ROHS
IC REG LINEAR 1.8V 1A SOT223-6
The three parts on the right have similar specifications to AON7400A.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSubcategoryDrain Current-Max (Abs) (ID)View Compare
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AON7400A18 WeeksSurface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)2008yesActive1 (Unlimited)5EAR99MOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDNOT SPECIFIED8S-PDSO-F51SINGLE WITH BUILT-IN DIODE3.1W Ta 25W TcENHANCEMENT MODE25WDRAINN-ChannelSWITCHING7.5m Ω @ 20A, 10V2.5V @ 250μA1380pF @ 15V15A Ta 40A Tc24nC @ 10V30V4.5V 10V±20V40A20V30V36 mJROHS3 Compliant---
-
-Surface MountSurface Mount8-PowerVDFN---55°C~150°C TJTape & Reel (TR)2009-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------Single3.1W Ta 36W TcENHANCEMENT MODE--N-Channel-4.3m Ω @ 20A, 10V2.4V @ 250μA2940pF @ 15V20A Ta 40A Tc50nC @ 10V30V4.5V 10V±20V20A---RoHS CompliantFET General Purpose Power40A
-
-Surface MountSurface Mount8-PowerVDFN---55°C~150°C TJTape & Reel (TR)2011-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------Single3.1W Ta 62W TcENHANCEMENT MODE--N-Channel-8m Ω @ 20A, 10V2.4V @ 250μA1300pF @ 15V15.8A Ta 40A Tc20nC @ 10V30V4.5V 10V±20V40A---RoHS CompliantFET General Purpose Power-
-
--Surface Mount8-PowerVDFN---55°C~150°C TJTape & Reel (TR)2011-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------3.1W Ta 25W Tc---N-Channel-8.5m Ω @ 20A, 10V1.7V @ 250μA1900pF @ 15V14A Ta 40A Tc32nC @ 10V30V4.5V 10V±12V-------
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