AON7400A

Alpha & Omega Semiconductor Inc. AON7400A

Part Number:
AON7400A
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2481863-AON7400A
Description:
MOSFET N-CH 30V 15A 8DFN
ECAD Model:
Datasheet:
AON7400A

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Specifications
Alpha & Omega Semiconductor Inc. AON7400A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AON7400A.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • JESD-30 Code
    S-PDSO-F5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.1W Ta 25W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    25W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1380pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    15A Ta 40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    40A
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    36 mJ
  • RoHS Status
    ROHS3 Compliant
Description
AON7400A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 36 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1380pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

AON7400A Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 40A
a 30V drain to source voltage (Vdss)


AON7400A Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AON7400A applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
AON7400A More Descriptions
Trans MOSFET N-CH 30V 40A 8-Pin DFN-A EP
30V N-Channel MOSFET, DFN3x3A-8L_EP, RoHSAlpha & Omega Semiconductor SCT
30V 15A 3.1W 7.5mΩ@10V,20A N Channel DFN-8(3x3) MOSFETs ROHS
IC REG LINEAR 1.8V 1A SOT223-6
Product Comparison
The three parts on the right have similar specifications to AON7400A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Subcategory
    Drain Current-Max (Abs) (ID)
    View Compare
  • AON7400A
    AON7400A
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    NOT SPECIFIED
    8
    S-PDSO-F5
    1
    SINGLE WITH BUILT-IN DIODE
    3.1W Ta 25W Tc
    ENHANCEMENT MODE
    25W
    DRAIN
    N-Channel
    SWITCHING
    7.5m Ω @ 20A, 10V
    2.5V @ 250μA
    1380pF @ 15V
    15A Ta 40A Tc
    24nC @ 10V
    30V
    4.5V 10V
    ±20V
    40A
    20V
    30V
    36 mJ
    ROHS3 Compliant
    -
    -
    -
  • AON7422E
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    Single
    3.1W Ta 36W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    4.3m Ω @ 20A, 10V
    2.4V @ 250μA
    2940pF @ 15V
    20A Ta 40A Tc
    50nC @ 10V
    30V
    4.5V 10V
    ±20V
    20A
    -
    -
    -
    RoHS Compliant
    FET General Purpose Power
    40A
  • AON7200
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    Single
    3.1W Ta 62W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    8m Ω @ 20A, 10V
    2.4V @ 250μA
    1300pF @ 15V
    15.8A Ta 40A Tc
    20nC @ 10V
    30V
    4.5V 10V
    ±20V
    40A
    -
    -
    -
    RoHS Compliant
    FET General Purpose Power
    -
  • AON7416_101
    -
    -
    Surface Mount
    8-PowerVDFN
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.1W Ta 25W Tc
    -
    -
    -
    N-Channel
    -
    8.5m Ω @ 20A, 10V
    1.7V @ 250μA
    1900pF @ 15V
    14A Ta 40A Tc
    32nC @ 10V
    30V
    4.5V 10V
    ±12V
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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