AOD4N60

Alpha & Omega Semiconductor Inc. AOD4N60

Part Number:
AOD4N60
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2485256-AOD4N60
Description:
MOSFET N-CH 600V 4A TO252
ECAD Model:
Datasheet:
AOD4N60

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Specifications
Alpha & Omega Semiconductor Inc. AOD4N60 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOD4N60.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    104W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.3 Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14.5nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Continuous Drain Current (ID)
    4A
  • Drain Current-Max (Abs) (ID)
    4A
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    235 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
AOD4N60 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 235 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 640pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

AOD4N60 Features
the avalanche energy rating (Eas) is 235 mJ
a continuous drain current (ID) of 4A
a 600V drain to source voltage (Vdss)


AOD4N60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD4N60 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
AOD4N60 More Descriptions
Trans MOSFET N-CH 600V 4A 3-Pin(2 Tab) TO-252 T/R
600V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 32A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Product Comparison
The three parts on the right have similar specifications to AOD4N60.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Supplier Device Package
    Series
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Rds On Max
    View Compare
  • AOD4N60
    AOD4N60
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    2
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    3
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    104W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    2.3 Ω @ 2A, 10V
    4.5V @ 250μA
    640pF @ 25V
    4A Tc
    14.5nC @ 10V
    600V
    10V
    ±30V
    4A
    4A
    600V
    235 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • AOD4144_003
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Bulk
    2011
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    2.3W Ta 50W Tc
    -
    -
    N-Channel
    -
    8mOhm @ 20A, 10V
    2.4V @ 250μA
    1430pF @ 15V
    13A Ta 55A Tc
    28nC @ 10V
    30V
    4.5V 10V
    ±20V
    55A
    -
    -
    -
    RoHS Compliant
    -
    TO-252, (D-Pak)
    SDMOS™
    175°C
    -55°C
    1.43nF
    8 mΩ
  • AOD4158
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Bulk
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    32W Tc
    -
    -
    N-Channel
    -
    9mOhm @ 20A, 10V
    2.4V @ 250μA
    1500pF @ 15V
    46A Tc
    18nC @ 10V
    30V
    10V
    ±20V
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
  • AOD486A
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    2W Ta 50W Tc
    -
    -
    N-Channel
    -
    9.8m Ω @ 20A, 10V
    3V @ 250μA
    1920pF @ 20V
    50A Tc
    22nC @ 10V
    40V
    4.5V 10V
    ±20V
    50A
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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