Alpha & Omega Semiconductor Inc. AOD4N60
- Part Number:
- AOD4N60
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2485256-AOD4N60
- Description:
- MOSFET N-CH 600V 4A TO252
- Datasheet:
- AOD4N60
Alpha & Omega Semiconductor Inc. AOD4N60 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOD4N60.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max104W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.3 Ω @ 2A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs14.5nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)4A
- Drain Current-Max (Abs) (ID)4A
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)235 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AOD4N60 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 235 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 640pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
AOD4N60 Features
the avalanche energy rating (Eas) is 235 mJ
a continuous drain current (ID) of 4A
a 600V drain to source voltage (Vdss)
AOD4N60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD4N60 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 235 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 640pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
AOD4N60 Features
the avalanche energy rating (Eas) is 235 mJ
a continuous drain current (ID) of 4A
a 600V drain to source voltage (Vdss)
AOD4N60 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD4N60 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
AOD4N60 More Descriptions
Trans MOSFET N-CH 600V 4A 3-Pin(2 Tab) TO-252 T/R
600V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 32A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
600V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 32A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The three parts on the right have similar specifications to AOD4N60.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLead FreeSupplier Device PackageSeriesMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxView Compare
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AOD4N6018 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-50°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING3R-PSSO-G21SINGLE WITH BUILT-IN DIODE104W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.3 Ω @ 2A, 10V4.5V @ 250μA640pF @ 25V4A Tc14.5nC @ 10V600V10V±30V4A4A600V235 mJROHS3 CompliantLead Free-------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJBulk2011Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------2.3W Ta 50W Tc--N-Channel-8mOhm @ 20A, 10V2.4V @ 250μA1430pF @ 15V13A Ta 55A Tc28nC @ 10V30V4.5V 10V±20V55A---RoHS Compliant-TO-252, (D-Pak)SDMOS™175°C-55°C1.43nF8 mΩ
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJBulk-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------32W Tc--N-Channel-9mOhm @ 20A, 10V2.4V @ 250μA1500pF @ 15V46A Tc18nC @ 10V30V10V±20V----RoHS Compliant-------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2008Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------2W Ta 50W Tc--N-Channel-9.8m Ω @ 20A, 10V3V @ 250μA1920pF @ 20V50A Tc22nC @ 10V40V4.5V 10V±20V50A---RoHS Compliant-------
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