AOD3N50

Alpha & Omega Semiconductor Inc. AOD3N50

Part Number:
AOD3N50
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2848826-AOD3N50
Description:
MOSFET N-CH 500V 2.8A TO252
ECAD Model:
Datasheet:
AOD3N50

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Specifications
Alpha & Omega Semiconductor Inc. AOD3N50 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOD3N50.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    57W Tc
  • Power Dissipation
    57W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    331pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 10V
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Continuous Drain Current (ID)
    2.8A
  • Gate to Source Voltage (Vgs)
    30V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
AOD3N50 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 331pF @ 25V.This device conducts a continuous drain current (ID) of 2.8A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

AOD3N50 Features
a continuous drain current (ID) of 2.8A
a 500V drain to source voltage (Vdss)


AOD3N50 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD3N50 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AOD3N50 More Descriptions
Trans MOSFET N-CH 500V 2.8A 3-Pin(2 Tab) DPAK / MOSFET N-CH 500V 2.8A TO252
2.8A I(D) 500V 3ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
500V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
Product Comparison
The three parts on the right have similar specifications to AOD3N50.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Rds On Max
    Number of Pins
    Subcategory
    Configuration
    Operating Mode
    Lead Free
    View Compare
  • AOD3N50
    AOD3N50
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -50°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1
    57W Tc
    57W
    N-Channel
    3 Ω @ 1.5A, 10V
    4.5V @ 250μA
    331pF @ 25V
    2.8A Tc
    8nC @ 10V
    500V
    10V
    ±30V
    2.8A
    30V
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • AOD3C50
    16 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    -
    83W Tc
    -
    N-Channel
    1.4Ohm @ 2.2A, 10V
    5V @ 250μA
    662pF @ 100V
    3A Tc
    25nC @ 10V
    500V
    10V
    ±30V
    3A
    -
    -
    ROHS3 Compliant
    TO-252, (D-Pak)
    150°C
    -55°C
    662pF
    1.4 Ω
    -
    -
    -
    -
    -
  • AOD3N40
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -50°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    -
    50W Tc
    -
    N-Channel
    3.1 Ω @ 1A, 10V
    4.5V @ 250μA
    225pF @ 25V
    2.6A Tc
    5.1nC @ 10V
    400V
    10V
    ±30V
    2.6A
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    3
    FET General Purpose Power
    Single
    ENHANCEMENT MODE
    -
  • AOD3N60
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -50°C~150°C TJ
    Tape & Reel (TR)
    2003
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1
    56.8W Tc
    56.8W
    N-Channel
    3.5 Ω @ 1.25A, 10V
    4.5V @ 250μA
    370pF @ 25V
    2.5A Tc
    12nC @ 10V
    600V
    10V
    ±30V
    2.5A
    30V
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    FET General Purpose Power
    Single
    ENHANCEMENT MODE
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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