Alpha & Omega Semiconductor Inc. AOD3N50
- Part Number:
- AOD3N50
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2848826-AOD3N50
- Description:
- MOSFET N-CH 500V 2.8A TO252
- Datasheet:
- AOD3N50
Alpha & Omega Semiconductor Inc. AOD3N50 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOD3N50.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max57W Tc
- Power Dissipation57W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3 Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds331pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.8A Tc
- Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)2.8A
- Gate to Source Voltage (Vgs)30V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
AOD3N50 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 331pF @ 25V.This device conducts a continuous drain current (ID) of 2.8A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AOD3N50 Features
a continuous drain current (ID) of 2.8A
a 500V drain to source voltage (Vdss)
AOD3N50 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD3N50 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 331pF @ 25V.This device conducts a continuous drain current (ID) of 2.8A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AOD3N50 Features
a continuous drain current (ID) of 2.8A
a 500V drain to source voltage (Vdss)
AOD3N50 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD3N50 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AOD3N50 More Descriptions
Trans MOSFET N-CH 500V 2.8A 3-Pin(2 Tab) DPAK / MOSFET N-CH 500V 2.8A TO252
2.8A I(D) 500V 3ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
500V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
2.8A I(D) 500V 3ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
500V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
The three parts on the right have similar specifications to AOD3N50.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Radiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxNumber of PinsSubcategoryConfigurationOperating ModeLead FreeView Compare
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AOD3N5018 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-50°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)MOSFET (Metal Oxide)157W Tc57WN-Channel3 Ω @ 1.5A, 10V4.5V @ 250μA331pF @ 25V2.8A Tc8nC @ 10V500V10V±30V2.8A30VNoROHS3 Compliant-----------
-
16 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)-83W Tc-N-Channel1.4Ohm @ 2.2A, 10V5V @ 250μA662pF @ 100V3A Tc25nC @ 10V500V10V±30V3A--ROHS3 CompliantTO-252, (D-Pak)150°C-55°C662pF1.4 Ω-----
-
18 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-50°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)MOSFET (Metal Oxide)-50W Tc-N-Channel3.1 Ω @ 1A, 10V4.5V @ 250μA225pF @ 25V2.6A Tc5.1nC @ 10V400V10V±30V2.6A--ROHS3 Compliant-----3FET General Purpose PowerSingleENHANCEMENT MODE-
-
18 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-50°C~150°C TJTape & Reel (TR)2003Active1 (Unlimited)MOSFET (Metal Oxide)156.8W Tc56.8WN-Channel3.5 Ω @ 1.25A, 10V4.5V @ 250μA370pF @ 25V2.5A Tc12nC @ 10V600V10V±30V2.5A30VNoROHS3 Compliant------FET General Purpose PowerSingleENHANCEMENT MODELead Free
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