AO4468

Alpha & Omega Semiconductor Inc. AO4468

Part Number:
AO4468
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
2484726-AO4468
Description:
MOSFET N-CH 30V 10.5A 8SOIC
ECAD Model:
Datasheet:
AO4468

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Specifications
Alpha & Omega Semiconductor Inc. AO4468 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4468.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.1W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 11.6A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    10.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    10.5A
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • RoHS Status
    ROHS3 Compliant
Description
AO4468 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10.5A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

AO4468 Features
a continuous drain current (ID) of 10.5A
a 30V drain to source voltage (Vdss)


AO4468 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4468 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
AO4468 More Descriptions
MOSFET N-CH 30V 10.5A 8SOIC / Trans MOSFET N-CH 30V 10.5A 8-Pin SOIC T/R
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V 10.5A 3.1W 14mΩ@10V,11.6A N Channel SOP-8 MOSFETs ROHS
30V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
IC SUPERVISOR 1 CHANNEL SOT23-6
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to AO4468.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    RoHS Status
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Reach Compliance Code
    View Compare
  • AO4468
    AO4468
    16 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    Not For New Designs
    1 (Unlimited)
    8
    EAR99
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.1W Ta
    ENHANCEMENT MODE
    3.1W
    N-Channel
    SWITCHING
    14m Ω @ 11.6A, 10V
    3V @ 250μA
    1200pF @ 15V
    10.5A Ta
    24nC @ 10V
    30V
    4.5V 10V
    ±20V
    10.5A
    20V
    30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • AO4438_101
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    8-SO
    -
    22 mOhm @ 8.2A, 10V
    3.1W (Ta)
    Tape & Reel (TR)
    8-SOIC (0.154", 3.90mm Width)
    -55°C ~ 150°C (TJ)
    Surface Mount
    2300pF @ 30V
    30nC @ 4.5V
    N-Channel
    -
    4.5V, 10V
    60V
    8.2A (Ta)
    -
  • AO4440L
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    2.5W Ta
    -
    -
    N-Channel
    -
    55m Ω @ 5A, 10V
    3V @ 250μA
    540pF @ 30V
    5A Ta
    5.5nC @ 4.5V
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
  • AO4454L
    -
    -
    -
    -
    -
    -
    -
    Tape & Reel (TR)
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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