Alpha & Omega Semiconductor Inc. AO4468
- Part Number:
- AO4468
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2484726-AO4468
- Description:
- MOSFET N-CH 30V 10.5A 8SOIC
- Datasheet:
- AO4468
Alpha & Omega Semiconductor Inc. AO4468 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4468.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.1W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14m Ω @ 11.6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 15V
- Current - Continuous Drain (Id) @ 25°C10.5A Ta
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)10.5A
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
AO4468 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10.5A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
AO4468 Features
a continuous drain current (ID) of 10.5A
a 30V drain to source voltage (Vdss)
AO4468 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4468 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10.5A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
AO4468 Features
a continuous drain current (ID) of 10.5A
a 30V drain to source voltage (Vdss)
AO4468 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4468 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
AO4468 More Descriptions
MOSFET N-CH 30V 10.5A 8SOIC / Trans MOSFET N-CH 30V 10.5A 8-Pin SOIC T/R
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V 10.5A 3.1W 14mΩ@10V,11.6A N Channel SOP-8 MOSFETs ROHS
30V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
IC SUPERVISOR 1 CHANNEL SOT23-6
French Electronic Distributor since 1988
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V 10.5A 3.1W 14mΩ@10V,11.6A N Channel SOP-8 MOSFETs ROHS
30V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
IC SUPERVISOR 1 CHANNEL SOT23-6
French Electronic Distributor since 1988
The three parts on the right have similar specifications to AO4468.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinRoHS StatusVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Reach Compliance CodeView Compare
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AO446816 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2010Not For New Designs1 (Unlimited)8EAR99ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING8Not Qualified1SINGLE WITH BUILT-IN DIODE3.1W TaENHANCEMENT MODE3.1WN-ChannelSWITCHING14m Ω @ 11.6A, 10V3V @ 250μA1200pF @ 15V10.5A Ta24nC @ 10V30V4.5V 10V±20V10.5A20V30VROHS3 Compliant--------------------
-
---------------------------------------3V @ 250µA±20VMOSFET (Metal Oxide)8-SO-22 mOhm @ 8.2A, 10V3.1W (Ta)Tape & Reel (TR)8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount2300pF @ 30V30nC @ 4.5VN-Channel-4.5V, 10V60V8.2A (Ta)-
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------2.5W Ta--N-Channel-55m Ω @ 5A, 10V3V @ 250μA540pF @ 30V5A Ta5.5nC @ 4.5V60V4.5V 10V±20V-----------------------
-
-------Tape & Reel (TR)2010Obsolete1 (Unlimited)----------------------------------------------compliant
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