ON Semiconductor 2V7002KT1G
- Part Number:
- 2V7002KT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848584-2V7002KT1G
- Description:
- MOSFET N-CH 60V 320MA SOT-23-3
- ECAD Model:
-
- Datasheet:
- 2V7002KT1G
ON Semiconductor 2V7002KT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2V7002KT1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300mW Tj
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation420mW
- Turn On Delay Time12.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
- Current - Continuous Drain (Id) @ 25°C320mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Rise Time9ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time55.8 ns
- Continuous Drain Current (ID)320mA
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min60V
- Feedback Cap-Max (Crss)5 pF
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2V7002KT1G Description
2V7002KT1G is a 60V single N-Channel power MOSFET available in SOT-23. 2V7002KT1G MOSFET is capable of lower power and automotive applications.
2V7002KT1G Features ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
2V7002KT1G Applications Level Shift Circuits
DC?DC Converter
Low Side Load Switch
Portable Applications i.e. DSC, PDA, Cell Phone, etc
2V7002KT1G Features ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
2V7002KT1G Applications Level Shift Circuits
DC?DC Converter
Low Side Load Switch
Portable Applications i.e. DSC, PDA, Cell Phone, etc
2V7002KT1G More Descriptions
2V7002KT1G N-channel MOSFET Transistor; 0.32 A; 60 V; 3-Pin SOT-23
Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Trans MOSFET N-CH 60V 0.32A Automotive 3-Pin SOT-23 T/R / MOSFET N-CH 60V 320MA SOT-23-3
N-Channel 60 V 1.6 Ohm 300 mW Surface Mount Small Signal Mosfet - SOT-23
N-Channel Small Signal MOSFET 60V, 380mA, 1.6Ω
MOSFET, N-CH, 60V, 0.38A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 380mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Pow
Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Trans MOSFET N-CH 60V 0.32A Automotive 3-Pin SOT-23 T/R / MOSFET N-CH 60V 320MA SOT-23-3
N-Channel 60 V 1.6 Ohm 300 mW Surface Mount Small Signal Mosfet - SOT-23
N-Channel Small Signal MOSFET 60V, 380mA, 1.6Ω
MOSFET, N-CH, 60V, 0.38A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 380mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Pow
Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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