STMicroelectronics 2STF1550
- Part Number:
- 2STF1550
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2469236-2STF1550
- Description:
- TRANS NPN 50V 5A SOT-89
- ECAD Model:
-
- Datasheet:
- 2ST(F,N)1550
STMicroelectronics 2STF1550 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STF1550.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation1.4W
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part Number2STF15
- Pin Count4
- JESD-30 CodeR-PDSO-F4
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce135 @ 2A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic450mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STF1550 Overview
In this device, the DC current gain is 135 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
2STF1550 Features
the DC current gain for this device is 135 @ 2A 2V
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 5V
2STF1550 Applications
There are a lot of STMicroelectronics
2STF1550 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 135 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
2STF1550 Features
the DC current gain for this device is 135 @ 2A 2V
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 5V
2STF1550 Applications
There are a lot of STMicroelectronics
2STF1550 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STF1550 More Descriptions
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
TRANS NPN 50V 5A SOT-89 / Trans GP BJT NPN 50V 5A 1400mW 4-Pin(3 Tab) SOT-89 T/R
NPN TRANSISTOR 50V 5A SOT89 RoHSconf
TRANS NPN 50V 5A SOT-89 / Trans GP BJT NPN 50V 5A 1400mW 4-Pin(3 Tab) SOT-89 T/R
NPN TRANSISTOR 50V 5A SOT89 RoHSconf
The three parts on the right have similar specifications to 2STF1550.
-
ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)RoHS StatusLead FreeTerminal FinishHTS CodeConfigurationPower - MaxTransition FrequencyFrequency - TransitionPbfree CodeFrequencyRadiation HardeningLifecycle StatusFactory Lead TimeNumber of PinsVoltage - Rated DCCurrent RatingGain Bandwidth ProductCollector Emitter Saturation VoltagehFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCView Compare
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2STF1550TinSurface MountSurface MountTO-243AASILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99Other Transistors1.4WDUALFLAT260not_compliantNOT SPECIFIED2STF154R-PDSO-F4Not Qualified1Single1.4WCOLLECTORSWITCHINGNPNNPN50V5A135 @ 2A 2V100nA ICBO450mV @ 300mA, 3A50V50V50V5VROHS3 CompliantLead Free----------------------- -
-Surface MountSurface MountTO-243AASILICON150°C TJCut Tape (CT)e3Obsolete1 (Unlimited)3EAR99Other Transistors1.4WSINGLEFLAT260not_compliant302STF153R-PSSO-F3Not Qualified1--COLLECTORSWITCHINGNPNNPN500mV5A150 @ 500mA 2V100nA ICBO500mV @ 40mA, 3.5A25V25V--ROHS3 Compliant-Matte Tin (Sn)8541.29.00.75SINGLE1.4W120MHz120MHz----------------
-
TinSurface MountSurface MountTO-243AASILICON-65°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99Other Transistors1.4WDUALFLAT260--2STF224R-PDSO-F4-1Single1.4WCOLLECTORSWITCHINGPNPPNP80V2A140 @ 100mA 2V1mA250mV @ 100mA, 1A80V80V80V5VROHS3 Compliant-----50MHz-yes50MHzNo-------------
-
TinSurface MountSurface MountTO-243AASILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)3EAR99Other Transistors1.4W-FLAT260-302STF133--1Single1.4WCOLLECTORSWITCHINGNPNNPN60V3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V60V80V6VROHS3 CompliantLead Free----130MHz--130MHzNoACTIVE (Last Updated: 7 months ago)8 Weeks380V3A130MHz180mV160150°C1.6mm4.6mm2.6mmNo SVHC
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