STMicroelectronics 2STF1360
- Part Number:
- 2STF1360
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2462749-2STF1360
- Description:
- TRANS NPN 60V 3A SOT-89
- Datasheet:
- 2STF1360
STMicroelectronics 2STF1360 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STF1360.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1.4W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency130MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2STF13
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 150mA, 3A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency130MHz
- Collector Emitter Saturation Voltage180mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min160
- Max Junction Temperature (Tj)150°C
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STF1360 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 150mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).130MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
2STF1360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz
2STF1360 Applications
There are a lot of STMicroelectronics
2STF1360 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 150mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).130MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
2STF1360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz
2STF1360 Applications
There are a lot of STMicroelectronics
2STF1360 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STF1360 More Descriptions
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2STF1360 Series NPN 60 V 3 A Fast Switching Power Transistor - SOT-89
Trans GP BJT NPN 60V 3A 1400mW 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar, NPN, 2V, 150mA, SOT-89, Tape and ReelSTMicroelectronics SCT
Transistor, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.4W;
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.4 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
TRANSISTOR, NPN, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.4W; DC Collector Current: 3A; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 3A; Current Ic Continuous a Max: 3A; Current Ic hFE: 1A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.4W; Termination Type: Surface Mount Device; Voltage Vcbo: 80V
2STF1360 Series NPN 60 V 3 A Fast Switching Power Transistor - SOT-89
Trans GP BJT NPN 60V 3A 1400mW 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar, NPN, 2V, 150mA, SOT-89, Tape and ReelSTMicroelectronics SCT
Transistor, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.4W;
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.4 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
TRANSISTOR, NPN, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.4W; DC Collector Current: 3A; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 3A; Current Ic Continuous a Max: 3A; Current Ic hFE: 1A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.4W; Termination Type: Surface Mount Device; Voltage Vcbo: 80V
The three parts on the right have similar specifications to 2STF1360.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionReach Compliance CodeJESD-30 CodeQualification StatusTerminationCurrent - Collector (Ic) (Max)Pbfree CodeView Compare
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2STF1360ACTIVE (Last Updated: 7 months ago)8 WeeksTinSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)3EAR99Other Transistors80V1.4WFLAT2603A130MHz302STF1331Single1.4WCOLLECTORSWITCHING130MHzNPNNPN60V3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V130MHz180mV60V80V6V160150°C1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free--------
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--TinSurface MountSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99Other Transistors-1.4WFLAT260--NOT SPECIFIED2STF1541Single1.4WCOLLECTORSWITCHING-NPNNPN50V5A135 @ 2A 2V100nA ICBO450mV @ 300mA, 3A50V--50V50V5V-------ROHS3 CompliantLead FreeDUALnot_compliantR-PDSO-F4Not Qualified---
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ACTIVE (Last Updated: 8 months ago)8 WeeksTinSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)3EAR99Other Transistors-1.4WFLAT260-130MHz302STF2331Single1.4WCOLLECTORSWITCHING130MHzPNPPNP-60V-3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V130MHz-300mV60V-60V-6V160150°C1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free----SMD/SMT3A-
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--TinSurface MountSurface MountTO-243AA-SILICON-65°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99Other Transistors-1.4WFLAT260-50MHz-2STF2241Single1.4WCOLLECTORSWITCHING-PNPPNP80V2A140 @ 100mA 2V1mA250mV @ 100mA, 1A80V50MHz-80V80V5V------NoROHS3 Compliant-DUAL-R-PDSO-F4---yes
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