STMicroelectronics 2STF2360
- Part Number:
- 2STF2360
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464331-2STF2360
- Description:
- TRANS PNP 60V 3A SOT-89
- Datasheet:
- 2STF2360
STMicroelectronics 2STF2360 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STF2360.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation1.4W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency130MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2STF23
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-60V
- Max Collector Current-3A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 150mA, 3A
- Collector Emitter Breakdown Voltage60V
- Current - Collector (Ic) (Max)3A
- Transition Frequency130MHz
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-6V
- hFE Min160
- Max Junction Temperature (Tj)150°C
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STF2360 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 150mA, 3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 130MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as -3A volts at its maximum.
2STF2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2STF2360 Applications
There are a lot of STMicroelectronics
2STF2360 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 150mA, 3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 130MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as -3A volts at its maximum.
2STF2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2STF2360 Applications
There are a lot of STMicroelectronics
2STF2360 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STF2360 More Descriptions
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
60V 1.4W 160@1A,2V 3A PNP SOT-89 Bipolar Transistors - BJT ROHS
Bipolar (Bjt) Single Transistor, Pnp, 60 V, 130 Mhz, 1.4 W, -3 A, 160 |Stmicroelectronics 2STF2360
Trans GP BJT PNP 60V 3A 1400mW 4-Pin(3 Tab) SOT-89 T/R
Bipolar Transistors - BJT Lo Vltg fast switch pnp Pwr transistor
Power Bipolar, PNP, 2V, 150mA, SOT-89, Tape and ReelSTMicroelectronics SCT
Transistor PNP FAST SW SOT-89; Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation
TRANSISTOR PNP FAST SW SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.4W; DC Collector Current: -3A; DC Current Gain hFE: 160hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 320mV; Current Ic Continuous a Max: 2A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device
60V 1.4W 160@1A,2V 3A PNP SOT-89 Bipolar Transistors - BJT ROHS
Bipolar (Bjt) Single Transistor, Pnp, 60 V, 130 Mhz, 1.4 W, -3 A, 160 |Stmicroelectronics 2STF2360
Trans GP BJT PNP 60V 3A 1400mW 4-Pin(3 Tab) SOT-89 T/R
Bipolar Transistors - BJT Lo Vltg fast switch pnp Pwr transistor
Power Bipolar, PNP, 2V, 150mA, SOT-89, Tape and ReelSTMicroelectronics SCT
Transistor PNP FAST SW SOT-89; Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation
TRANSISTOR PNP FAST SW SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.4W; DC Collector Current: -3A; DC Current Gain hFE: 160hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 320mV; Current Ic Continuous a Max: 2A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device
The three parts on the right have similar specifications to 2STF2360.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionReach Compliance CodeJESD-30 CodeQualification StatusPbfree CodeVoltage - Rated DCCurrent RatingView Compare
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2STF2360ACTIVE (Last Updated: 8 months ago)8 WeeksTinSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)3SMD/SMTEAR99Other Transistors1.4WFLAT260130MHz302STF2331Single1.4WCOLLECTORSWITCHING130MHzPNPPNP-60V-3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V3A130MHz-300mV60V-60V-6V160150°C1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free--------
-
--TinSurface MountSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4-EAR99Other Transistors1.4WFLAT260-NOT SPECIFIED2STF1541Single1.4WCOLLECTORSWITCHING-NPNNPN50V5A135 @ 2A 2V100nA ICBO450mV @ 300mA, 3A50V---50V50V5V-------ROHS3 CompliantLead FreeDUALnot_compliantR-PDSO-F4Not Qualified---
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--TinSurface MountSurface MountTO-243AA-SILICON-65°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4-EAR99Other Transistors1.4WFLAT26050MHz-2STF2241Single1.4WCOLLECTORSWITCHING-PNPPNP80V2A140 @ 100mA 2V1mA250mV @ 100mA, 1A80V-50MHz-80V80V5V------NoROHS3 Compliant-DUAL-R-PDSO-F4-yes--
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ACTIVE (Last Updated: 7 months ago)8 WeeksTinSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)3-EAR99Other Transistors1.4WFLAT260130MHz302STF1331Single1.4WCOLLECTORSWITCHING130MHzNPNNPN60V3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V-130MHz180mV60V80V6V160150°C1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free-----80V3A
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